Semiconductor TSV Mark Formation With Inclined Sidewall Openings

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Solution Overview

Problem

Current methods for forming conductive marks in semiconductor structures often result in incomplete filling of openings, leading to voids that cause bonding process failures.

Innovation Solution

A manufacturing method involving a patterned photoresist layer with inclined sidewalls is used to form openings with funnel shapes, allowing a conductive layer to be partially filled and used as a stop layer to create a mark, while also forming a through-substrate via, thereby preventing bonding process failures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conductive layer is filled in an opening to form a conductive mark, then the mark can be formed for monitoring TSV formation status, but if the conductive layer is not completely filled, voids will form causing bonding process failure

Engineering Contradiction:

Improvebonding process reliabilityVSAvoidconductive layer filling completeness

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent applies curvature by forming the opening with an inclined sidewall instead of a vertical sidewall. This curved/angled geometry allows the conductive layer to be deposited at an oblique angle, enabling complete filling of the opening without forming voids, thus ensuring both reliable bonding and precise mark formation.

Inventive Principle:

Principle #14Spheroidality (Curvature)

Solution Approach 2:

The patent performs preliminary action by pre-forming the opening with a specific inclined geometry before depositing the conductive layer. This pre-configured structure ensures that subsequent conductive layer deposition will completely fill the opening, preventing void formation and bonding failures.

Inventive Principle:

Principle #10Preliminary action

2Manufacturing precision

If the conductive layer is used as a stop layer to form a mark, then precise mark creation is achieved, but the conductive layer must be partially removed which adds process complexity

Engineering Contradiction:

Improvemark formation precisionVSAvoidprocess steps complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The conductive layer serves multiple functions: it forms the monitoring mark, acts as a stop layer for subsequent etching processes, and creates the TSV structure. This multi-functionality reduces the need for separate dedicated layers, simplifying the overall process despite the partial removal step.

Inventive Principle:

Principle #6Universality (Multi-functionality)

3Measurement precision

If an opening is formed in the substrate to create a mark, then the mark can monitor TSV formation, but incomplete filling creates voids that cause bonding failure

Engineering Contradiction:

ImproveTSV formation monitoring accuracyVSAvoidbonding process reliability

Core Design Contradiction:

Measurement precisionVSReliability

Solution Approach 1:

The inclined sidewall geometry of the opening enables complete conductive layer filling, eliminating voids that would compromise bonding reliability, while still maintaining the opening's function as a monitoring mark for TSV formation.

Inventive Principle:

Principle #14Spheroidality (Curvature)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method ensures smooth formation of conductive marks and vias, preventing subsequent bonding failures by ensuring complete filling and utilizing the conductive layer as a stop layer for precise mark creation.

Implementation Method 1

A patterned photoresist layer is formed on the substrate by a lithography process

Methodology Applied

Scientific EffectLithography: Photography

Implementation Method 2

An etching process is performed on the substrate by using the patterned photoresist layer as a mask to form a third opening corresponding to the first opening and a fourth opening corresponding to the second opening in the substrate

Methodology Applied

Scientific EffectEtching:

Implementation Method 3

A conductive layer is formed on the substrate. The conductive layer fills the third opening and the fourth opening

Methodology Applied

Scientific EffectConductive layer deposition: Deposition (physical)

Implementation Method 4

A portion of the conductive layer is removed by using the conductive layer located in the third opening as a stop layer to form a mark in the third opening and a through-substrate via (TSV) in the fourth opening

Methodology Applied

Scientific EffectChemical mechanical polishing:

Data Source

PatentUS20260076120A1Manufacturing method of semiconductor structure

Publication Date: 2026.03.12 POWERCHIP SEMICON MFG CORP

AI summary

A manufacturing method of a semiconductor structure including following steps is provided. A patterned photoresist layer is formed on a substrate by a lithography process. The patterned photoresist layer includes a first opening and a second opening. The first opening includes a first inclined sidewall. An etching process is performed on the substrate by using the patterned photoresist layer as a mask to form a third opening corresponding to the first opening and a fourth opening corresponding to the second opening in the substrate. The third opening includes a second inclined sidewall. A conductive layer is formed on the substrate. The conductive layer fills the third opening and the fourth opening. A portion of the conductive layer is removed by using the conductive layer located in the third opening as a stop layer to form a mark in the third opening and a TSV in the fourth opening.