TSV Conductive Pattern Layout for Lower Power Loss and Heat

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Solution Overview

Problem

Existing semiconductor devices face challenges in efficiently connecting multiple stacked semiconductor devices through through silicon vias (TSVs) due to limitations in dielectric materials and conductive patterns, leading to suboptimal performance and heat dissipation.

Innovation Solution

The semiconductor device incorporates a multi-layered insulating structure with low-k and ultra-low-k dielectric materials, along with conductive patterns and through electrodes, to enhance electrical connectivity and heat dissipation by using a combination of conductive materials like copper and aluminum, and insulating materials like silicon oxide and silicon nitride, facilitating improved electrical pathways and thermal management.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If conventional TSV methods are used to connect stacked semiconductor devices, then electrical connectivity between devices is achieved, but power loss and heat generation increase due to high resistance

Engineering Contradiction:

Improvepower lossVSAvoidelectrical connectivity

Core Design Contradiction:

Loss of energyVSReliability

Solution Approach 1:

The through electrode is divided into multiple segments along its length, with each segment having different conductivity values. The first through electrode includes a first segment with higher conductivity and a second segment with lower conductivity, allowing optimization of current flow paths to reduce power loss while maintaining reliable electrical connectivity.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the through electrode are assigned different material compositions and conductivity characteristics. The first through electrode has regions with varying conductivity to optimize local current distribution, while the second through electrode has different conductivity properties, enabling localized optimization of electrical properties to reduce overall power loss.

Inventive Principle:

Principle #3Local quality

2Temperature

If through electrodes with uniform conductivity are used, then manufacturing is simplified, but heat dissipation performance is suboptimal

Engineering Contradiction:

Improveheat dissipationVSAvoidthrough electrode fabrication

Core Design Contradiction:

TemperatureVSEase of manufacture

Solution Approach 1:

The through electrode structure is segmented into multiple conductive regions with different conductivity values. The first through electrode contains segments with different conductivity to create optimized heat dissipation paths, and the second through electrode contains additional segments, enabling thermal management without requiring complete redesign of the fabrication process.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The conductivity parameter of the through electrode materials is varied along the length and across different electrodes. By changing material composition or structural properties to create regions with different conductivity, the patent optimizes heat dissipation performance while working within existing manufacturing capabilities.

Inventive Principle:

Principle #35Parameter changes

3Reliability

If multiple through electrodes with different properties are implemented, then electrical properties and heat dissipation are optimized, but device complexity increases

Engineering Contradiction:

Improveelectrical propertiesVSAvoidthrough electrode structure

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The electrode system is segmented into a first through electrode and a second through electrode, each with internal segments of different conductivity. This segmentation allows optimization of electrical properties for different functional requirements while maintaining a structured approach that can be integrated into existing device architectures.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The through electrodes serve multiple functions simultaneously: providing electrical connectivity between stacked devices, optimizing power loss through varied conductivity paths, and enabling heat dissipation through thermally conductive regions. This multi-functionality reduces the need for separate specialized structures.

Inventive Principle:

Principle #6Universality (Multi-functionality)

Data Source

PatentUS12616014B2Semiconductor device including a through electrode contacting a backside conductive pattern and a frontside conductive pattern and a semiconductor package including the same

Publication Date: 2026.04.28 SAMSUNG ELECTRONICS CO LTD

AI summary

A semiconductor device includes front and back side structures on first and second surfaces of a substrate, respectively, and first and second through electrodes penetrating the substrate. The front side structure includes a circuit device, a first front side conductive pattern at a first level, a second front side conductive pattern at a second level, a lower insulating structure, and first to third insulating structures. The back side structure includes a first and a second back side conductive pattern on the same level. The first through electrode contacts the first back side conductive pattern and the first front side conductive pattern. The second through electrode contacts the second back side conductive pattern and the second front side conductive pattern. The first front side conductive pattern penetrates the second insulating structure and at least a portion of the third insulating structure.