TSV Segmentation for High Integration Density in Semiconductor Chips
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Solution Overview
Problem
Semiconductor chips face challenges in achieving high integration density and efficient use of limited space due to limitations in existing through-silicon via (TSV) technologies, which affect noise removal and power supply stability.
Innovation Solution
A semiconductor chip design featuring a TSV passing through a transistor with a conductive layer, side wall insulating layer, and multi-layer wiring patterns to efficiently utilize space and achieve high integration density, along with a stack module and memory card configurations that incorporate these chips for enhanced connectivity and power management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a TSV passes through the semiconductor substrate without penetrating the conductive layer, then the manufacturing process is simpler, but the integration density and space utilization are reduced
Solution Approach 1:
The TSV structure is segmented into multiple sections: a first TSV penetrating the conductive layer to connect with a first conductive pad, and a second TSV not penetrating the conductive layer to connect with a second conductive pad. This segmentation allows different TSV configurations to coexist, optimizing both manufacturing ease and integration density for different functional requirements.
Solution Approach 2:
Different regions of the semiconductor substrate are assigned different TSV penetration characteristics. Some TSVs penetrate the conductive layer in regions requiring high connectivity, while other TSVs do not penetrate in regions where simpler manufacturing or different electrical characteristics are desired. This local differentiation optimizes overall device performance.
2Reliability
If the TSV structure is expanded to improve connectivity, then the electrical connection is enhanced, but the available space for other components is reduced
Solution Approach 1:
The patent utilizes the vertical dimension by having TSVs penetrate through the conductive layer to reach conductive pads on opposite sides of the substrate. This three-dimensional connectivity approach allows electrical connections to be established without occupying additional lateral space, thereby maintaining high electrical reliability while preserving available area for other components.
3Reliability
If decoupling capacitors are added to remove high frequency noise, then power supply stability is improved, but the device complexity increases
Solution Approach 1:
The decoupling capacitors are merged with the existing TSV and conductive pad structure. The capacitors are formed using the same conductive layers and insulating layers that define the TSV interconnect structure, eliminating the need for separate capacitor fabrication processes and reducing overall device complexity while maintaining power supply stability.
Data Source
AI summary
Provided are a semiconductor chip including a TSV passing through a transistor, and a stack module and a memory card using such a semiconductor chip. The semiconductor chip may include a semiconductor layer that has a first surface and a second surface opposite to each other. A conductive layer may be disposed on the first surface of the semiconductor layer. A TSV may pass through the semiconductor layer and the conductive layer. A side wall insulating layer may surround a side wall of the TSV in order to electrically insulate the semiconductor layer and the conductive layer from the TSV.