Tungsten Bronze Dielectric Composition for High-Temperature Voltage Resistance
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Solution Overview
Problem
Existing multilayer ceramic capacitors face challenges in achieving high voltage resistance and favorable DC bias characteristics at temperatures above 175°C, particularly in in-vehicle applications, due to issues with volatility of alkali metal elements and low specific permittivity at high temperatures.
Innovation Solution
A dielectric composition comprising a tungsten bronze type composite oxide with specific chemical formulation (Sr1.00−(s+t)BasCat)6.00−xRx(Ti1.00−(a+d)ZraSid)x−2.00(Nb1.00−bTab)8.00−xO30.00, where R is selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and s, t, x, a, b, and d are within defined ranges, along with optional subcomponents like Mn, Mg, Co, V, W, Mo, Li, B, and Al, to enhance voltage resistance and specific resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a perovskite type oxide is used for high voltage resistance at 150°C, then voltage resistance is improved, but specific permittivity decreases at temperatures of 175°C or higher
Solution Approach 1:
The patent employs a composite material system consisting of a tungsten bronze type oxide as the base dielectric material, which inherently provides both high voltage resistance and high specific permittivity. This composite approach allows the material to maintain favorable electrical properties across a wide temperature range including 175°C and above, resolving the contradiction between voltage resistance and specific permittivity that plagues single-phase perovskite materials.
Solution Approach 2:
The patent utilizes precise compositional parameter control within the tungsten bronze type oxide system, specifically adjusting the ratios of metal elements and oxidation states to optimize both voltage resistance and specific permittivity. By controlling chemical composition parameters rather than relying on phase transitions or structural changes, the material maintains stable electrical properties at high temperatures while preserving high permittivity characteristics.
2Quantity of substance
If an alkali metal element is added to achieve high specific permittivity, then specific permittivity is improved, but handling becomes cumbersome due to high volatility
Solution Approach 1:
The patent extracts or removes alkali metal elements from the dielectric composition entirely, replacing them with alkali-free tungsten bronze type oxide materials. This extraction eliminates the volatility problem associated with alkali metals during manufacturing and usage, while the tungsten bronze structure itself provides the necessary high specific permittivity through its crystal structure and electronic properties, not through alkali metal content.
3Quantity of substance
If a defect caused by potassium with high volatility occurs, then conduction electrons are easily generated, but breakdown voltage decreases
Solution Approach 1:
The patent converts the potential harm of volatile metal defects into a benefit by deliberately designing a defect-free tungsten bronze type oxide structure. The material's crystal structure inherently suppresses the formation of harmful conduction electrons through proper stoichiometry and oxidation state control, transforming the potential defect mechanism into a quality assurance mechanism that ensures high breakdown voltage while maintaining electrical stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The dielectric composition provides high voltage resistance and favorable DC bias characteristics at temperatures up to 175°C or higher, maintaining high specific resistance and permittivity, effectively addressing the limitations of previous technologies.
Implementation Method 1
The tungsten bronze type dielectric has a high specific permittivity at room temperature of about 100 to 700 and a favorable value of tan δ at room temperature of 5% or less
Implementation Method 2
the dielectric composition provides high voltage resistance and favorable DC bias characteristics at temperatures up to 175°C or higher, maintaining high specific resistance and permittivity
Data Source
AI summary
A dielectric composition with high voltage resistance and favorable reliability, and an electronic component using the composition, the composition containing a tungsten bronze type composite oxide represented by chemical formula (Sr1.00−(s+t)BasCat)6.00−xRx(Ti1.00−(a+d)ZraSid)x−2.00(Nb1.00−bTab)8.00−xO30.00, wherein R is at least one element selected from Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and s, t, x, a, b, and d satisfy 0≤s≤1.00, 0≤t≤1.00, 0≤s+t≤1.00, 0≤x≤3.00, 0.01≤a≤0.98, 0≤b≤1.00, 0.02≤d≤0.15, and 0.03≤a+d≤1.00. At least one element selected from Mn, Mg, Co, V, W, Mo, Li, B, and Al are contained as a sub component in 0.10 mol or more and 20.00 mol or less with respect to 100 mol of the main component.