Tungsten Control Gate Structure for Lower-Resistance Memory Arrays

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Conventional memory devices face challenges in achieving an optimal balance of device operations and control gate resistance due to the structure of control gates.

Innovation Solution

The use of tungsten structures for control gates in memory devices, which offer a relatively low resistance to improve device operations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional control gate structures are used, then manufacturing is easier, but control gate resistance is too high affecting device operations

Engineering Contradiction:

Improvedevice operationVSAvoidcontrol gate structuring

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent changes the material parameter of the control gate from conventional materials to tungsten, which has inherently lower resistivity. This parameter change directly reduces control gate resistance and improves device operation reliability without requiring complex structural modifications

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs tungsten as a composite material solution, utilizing its unique properties (low resistivity, high melting point, good adhesion) to create an optimized control gate structure that balances electrical performance with manufacturability

Inventive Principle:

Principle #40Composite materials

2Productivity

If control gate resistance is reduced to improve operations, then device performance improves, but structural complexity increases

Engineering Contradiction:

Improveoperational efficiencyVSAvoidcontrol gate structure

Core Design Contradiction:

ProductivityVSDevice complexity

Solution Approach 1:

The patent achieves reduced control gate resistance by changing the material parameter to tungsten, which naturally provides lower resistivity. This approach improves operational efficiency without requiring complex multi-layer or multi-component structural designs

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The tungsten structures enhance the performance of memory devices by optimizing control gate resistance, thereby improving operational efficiency.

Implementation Method 1

The resistance of the control gates can be based on the structures of the control gates. Each of the control gates can include a tungsten structure having a relatively low resistance

Methodology Applied

Scientific EffectElectrical resistivity: Electrical Resistance

Data Source

PatentUS12543559B2Memory device including control gates having tungsten structure

Publication Date: 2026.02.03 MICRON TECHNOLOGY INC

AI summary

Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a first dielectric material; a second dielectric material separated from the first dielectric material; a memory cell string including a pillar extending through the first and second dielectric materials, the pillar including a portion between the first and second dielectric materials; an additional dielectric material contacting the portion of the pillar; a conductive material contacting the additional dielectric material; and a tungsten structure including a portion of tungsten contacting the conductive material, wherein a majority of the portion of tungsten is beta-phase tungsten.