Tunneling Oxide Layer Between Carbon Layers for Off-Current Blocking

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Solution Overview

Problem

Current semiconductor memory devices face challenges in reducing off-current, which affects their reliability and performance, particularly in the absence of a tunneling oxide layer.

Innovation Solution

Incorporating a tunneling oxide layer between carbon layers in the semiconductor device structure to block off-current and improve interfacial characteristics, while using a phase-change layer and OTS (ovonic threshold switch) layers for switching functionality.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a tunneling oxide layer is not incorporated in the semiconductor device structure, then the device complexity is reduced, but the off-current increases significantly affecting reliability

Engineering Contradiction:

Improveoff-current blocking capabilityVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

A tunneling oxide layer is introduced as an intermediary component between the first carbon layer and the second carbon layer. This thin insulating layer acts as a mediator that blocks off-current while maintaining the overall device structure. The tunneling oxide layer is positioned at the interface between carbon layers, serving as a specialized barrier that prevents harmful current leakage without requiring complete structural redesign

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The semiconductor device employs a composite structure combining multiple materials with distinct functions: carbon layers for conductivity, tunneling oxide layer for insulation and off-current blocking, phase-change layer for switching functionality, and OTS layer for threshold switching. This multi-material composite approach allows each layer to contribute its unique properties, achieving reliable off-current blocking while maintaining device performance

Inventive Principle:

Principle #40Composite materials

2Reliability

If a tunneling oxide layer is incorporated between carbon layers, then off-current is significantly reduced, but the manufacturing process complexity increases

Engineering Contradiction:

Improvecurrent blocking performanceVSAvoidfabrication process complexity

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The device structure is segmented into distinct functional layers, with the tunneling oxide layer forming a separate, dedicated barrier component between the carbon layers. This segmentation allows the tunneling oxide layer to be deposited as an independent thin film using standard semiconductor fabrication techniques, making the manufacturing process manageable despite the added complexity

Inventive Principle:

Principle #1Segmentation

3Reliability

If multiple layers (carbon layers, tunneling oxide layer, phase-change layer, OTS layer) are stacked, then switching functionality and reliability are improved, but the device dimensions increase

Engineering Contradiction:

Improveswitching functionalityVSAvoidvertical stack height

Core Design Contradiction:

ReliabilityVSLength of stationary object

Solution Approach 1:

The device structure employs a nested, vertically-stacked configuration where multiple functional layers are arranged one above another in a compact tower-like structure. The tunneling oxide layer is nested between carbon layers, while the phase-change layer and OTS layer are stacked vertically to achieve switching functionality. This vertical nesting minimizes horizontal footprint while containing the increased dimensions in the vertical direction

Inventive Principle:

Principle #7Nested doll (Nesting)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Significantly reduces off-current, enhancing the reliability and operational performance of the semiconductor device by effectively blocking current when no voltage is applied and allowing current flow when voltage is applied, thereby improving memory device reliability.

Implementation Method 1

At least one tunneling oxide layer is disposed between the first carbon layer and the second carbon layer

Methodology Applied

Scientific EffectQuantum tunneling:

Implementation Method 2

a phase-change layer on the first electrode

Methodology Applied

Scientific EffectPhase change: Phase Change

Implementation Method 3

an OTS (ovonic threshold switch) layer on the first carbon layer

Methodology Applied

Scientific EffectOvonic threshold switch effect:

Data Source

PatentUS11641749B2Semiconductor device and method for fabricating the same

Publication Date: 2023.05.02 SAMSUNG ELECTRONICS CO LTD

AI summary

A semiconductor device includes a first electrode and a first carbon layer on the first electrode. A switch layer is disposed on the first carbon layer and a second carbon layer is disposed on the switch layer. At least one tunneling oxide layer is disposed between the first carbon layer and the second carbon layer. The device further includes a second electrode on the second carbon layer.