Fowler-Nordheim Tunneling Transistor with Insulating Nanochannel

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Solution Overview

Problem

Existing microelectronic devices with Fowler-Nordheim tunneling current modulation face challenges in achieving compactness and efficient energy consumption, particularly due to difficulties in creating channels smaller than 100 nanometers and high voltage requirements.

Innovation Solution

A microelectronic device with a compact Fowler-Nordheim tunneling current modulation structure, comprising a cathode, anode, and insulating channel, where the critical dimension of the channel is between 1 and 20 nanometers, and a gate dielectric zone with a thickness greater than the channel, using different dielectric materials and a stack of materials to optimize potential barriers, allowing for efficient current modulation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If conventional structures with empty channel space are used, then device fabrication is simpler, but channel size cannot be reduced below 100 nanometers and high voltages are required

Engineering Contradiction:

Improvechannel sizeVSAvoidfabrication difficulty

Core Design Contradiction:

Volume of moving objectVSEase of manufacture

Solution Approach 1:

The patent changes the physical state of the channel from empty space to filled insulating material, enabling sub-100nm channel dimensions while maintaining fabrication feasibility through standard deposition processes

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent uses composite structures with specific insulating materials (such as silicon oxide, silicon nitride) having tailored dielectric properties to enable Fowler-Nordheim tunneling at reduced voltages while maintaining compact channel dimensions

Inventive Principle:

Principle #40Composite materials

2Use of energy by moving object

If conventional empty channel structures are used, then fabrication is easier, but energy consumption increases due to high voltage requirements

Engineering Contradiction:

Improveenergy consumptionVSAvoidfabrication complexity

Core Design Contradiction:

Use of energy by moving objectVSEase of manufacture

Solution Approach 1:

The patent modifies the channel structure by filling it with insulating materials having optimized dielectric constants, which reduces the voltage required for Fowler-Nordheim tunneling and thereby decreases energy consumption

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent applies different insulating materials with specific dielectric properties in the channel region to locally enhance the electric field and reduce voltage requirements, achieving lower energy consumption without complicating overall fabrication

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables improved electrical performance with reduced leakage currents and enhanced modulation of Fowler-Nordheim current for microelectronic devices, achieving better compactness and energy efficiency.

Implementation Method 1

microelectronic device with Fowler-Nordheim tunneling current modulation

Methodology Applied

Scientific EffectFowler-Nordheim tunneling:

Data Source

PatentUS8173992B2Transistor or triode structure with tunneling effect and insulating nanochannel

Publication Date: 2012.05.08 STMICROELECTRONICS (CROLLES 2) SAS

AI summary

A microelectronic device is provided with at least one transistor or triode with Fowler-Nordheim tunneling current modulation, and supported on a substrate. The triode or the transistor includes at least one first block forming a cathode and at least one second block forming an anode. The first block and the second block are supported on the substrate, and are separated from each other by a channel insulating zone also supported on the substrate. A gate dielectric zone is supported on at least the channel insulating zone, and a gate is supported on the gate dielectric zone.