TVS Diode Series Junctions for Low Parasitic Capacitance

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional transient voltage suppressors (TVS) face challenges in reducing parasitic capacitance while maintaining effective electrostatic discharge (ESD) and surge protection capabilities, as increasing the number of diodes in series to reduce capacitance leads to higher on-resistance and compromised protection capabilities.

Innovation Solution

The TVS diode device incorporates a substrate with separated wells and electrodes, forming a current path through multiple PN junctions with varying gaps and doping concentrations to reduce parasitic capacitance while maintaining ESD and surge protection, allowing for selection of diode type based on gap and doping parameters.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the area of the diode is increased to bear great energy, then the ESD and surge protection capability is improved, but the parasitic capacitance increases and the operation rate slows down

Engineering Contradiction:
ImproveESD and surge protection capabilityVSAvoidoperation rate
Core Design Contradiction:
ReliabilityVSSpeed

Solution Approach 1:

The patent divides a single large-area diode into multiple smaller diodes connected in series. Each small diode has low capacitance due to its small area, but when connected in series, they collectively provide the necessary current handling capability for ESD and surge protection. The segmentation allows the TVS device to achieve both low capacitance and high power handling capability.

Inventive Principle:
Principle #1Segmentation

2Speed

If the number of diodes coupled in series is increased to reduce capacitance, then the parasitic capacitance is reduced, but the on-resistance becomes larger and the ESD and surge protection capability deteriorates

Engineering Contradiction:
Improveoperation rateVSAvoidESD and surge protection capability
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent optimizes the local properties of each diode in the series connection. By carefully designing the area, doping concentration, and structure of each individual diode, the patent achieves low capacitance while maintaining low on-resistance. The local quality of each diode is tailored to contribute to both low capacitance and low overall resistance of the series string.

Inventive Principle:
Principle #3Local quality

3Speed

If diodes with small area are used to reduce capacitance, then the parasitic capacitance is reduced, but the ESD and surge protection capability is limited

Engineering Contradiction:
Improveoperation rateVSAvoidenergy handling capability
Core Design Contradiction:
SpeedVSPower

Solution Approach 1:

The patent merges multiple small diodes in series to create a composite structure that exhibits both low capacitance and high power handling capability. The series connection of multiple low-capacitance diodes creates an equivalent capacitance that is lower than any individual diode, while the cumulative current handling capability of all diodes in series provides the necessary power handling for ESD and surge protection.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively reduces parasitic capacitance while maintaining ESD and surge protection capabilities, allowing for flexible diode configuration to suit different applications by adjusting gap and doping concentrations.

Implementation Method 1

the parasitic capacitance and slow operation rate

Methodology Applied
Scientific EffectParasitic capacitance: Parasitic Capacitance

Implementation Method 2

PN junctions having large area are necessary in the TVS

Methodology Applied
Scientific EffectPN junction: Diode

Data Source

PatentUS10043790B2Diode device of transient voltage suppressor and manufacturing method thereof
Publication Date: 2018.08.07 UPI SEMICON CORP
  • US10043790B2 patent drawing
  • US10043790B2 patent drawing
  • US10043790B2 patent drawing

AI summary

A diode device of a transient voltage suppressor (TVS) is disclosed. The diode device includes a substrate, a first well, a second well, a first electrode and a second electrode. The substrate has a first surface. The first well is formed in the substrate and near the first surface. The second well is formed in the substrate and near the first surface. There is a gap between the first well and the second well. The first electrode is electrically connected with the first well. The second electrode is electrically connected with the second well. A current path is formed from the first electrode, the first well, the substrate, the second well to the second electrode. The current path passes through a plurality of PN junctions to form an equivalent circuit having a plurality of equivalent capacitances coupled in series.