Non-segmented U-shaped UBM for Shifted Luminance Control
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Solution Overview
Problem
Current semiconductor light-emitting devices struggle with reproducibility and efficiency in achieving multiple spatial emission distributions, as feature sizes decrease and the spatial distribution of light emission becomes fixed, leading to inefficiencies in manufacturing and increased costs due to the need for multiple devices to cover different emission profiles.
Innovation Solution
The design incorporates a semiconductor light-emitting device with a regular grid of vias and independent contacts that allow for varying via current magnitudes, enabling control over local carrier recombination density and emission intensity across the device, allowing for multiple emission distributions from a single device configuration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If feature sizes are decreased to achieve higher spatial resolution, then emission intensity distribution control improves, but manufacturing precision and reproducibility deteriorate
Solution Approach 1:
The device is divided into multiple independently controllable regions through segmented contact structures and via arrays. Each region can be controlled independently through its own contact, allowing precise control of emission intensity distribution without requiring extremely small feature sizes throughout the entire device. This segmentation approach maintains manufacturing reproducibility while achieving high spatial resolution in the emission pattern.
2Adaptability or versatility
If multiple devices are used to cover different emission profiles, then emission distribution versatility improves, but device complexity and manufacturing costs increase
Solution Approach 1:
The device incorporates dynamically controllable emission characteristics through independent control of multiple regions. By varying the current magnitude through each segmented contact, the emission intensity distribution can be dynamically adjusted between different profiles (e.g., sloped, peaked, uniform) without requiring multiple separate devices. This dynamic control capability provides versatility while maintaining a single-device configuration.
Solution Approach 2:
The device structure is designed to perform multiple emission distribution functions through a single configuration. The segmented contact architecture with independent via control enables the same physical device to generate various emission patterns (sloped, peaked, uniform, asymmetric) by simply changing the electrical control parameters, making the device universal for different illumination requirements.
3Productivity
If non-uniform light intensity patterns are implemented, then luminance shaping efficiency improves, but manufacturing complexity increases
Solution Approach 1:
The device implements local quality control through segmented contact structures where each contact region can have different electrical and optical properties. This allows non-uniform light intensity patterns to be created by controlling the current distribution through different regions, achieving luminance shaping efficiency without requiring complex manufacturing processes. The local quality is controlled through standard semiconductor fabrication techniques applied to the contact and via structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the spatial resolution and flexibility of light emission intensity distribution, enabling a single device to produce various emission profiles, such as sloped, 1D-peaked, and 2D-peaked distributions, reducing manufacturing complexity and costs.
Implementation Method 1
a first doped semiconductor layer; a second doped semiconductor layer... an array of a plurality of vias arranged across the device, the plurality of vias connecting the plurality of first contacts to the first doped semiconductor layer... enabling control over local carrier recombination density and emission intensity
Data Source
AI summary
Provided is a light-emitting diode (LED) device that includes a continuous non-segmented edge contact along at least one side of a semiconductor layer. A first set of independent contacts connected to a first doped layer and a set of edge contacts connected to the second doped layer. Multiple conductive vias connect the independent contacts to the first doped layer, allowing differing corresponding via currents to be applied to the first doped layer through the vias independent of one another.