Resist Underlayer Composition With Crosslinked Hardness for Etching
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Solution Overview
Problem
Existing resist underlayer film-forming compositions for semiconductor manufacturing are inadequate in reducing sublimate contamination and improving etching resistance, particularly in terms of high hardness.
Innovation Solution
A resist underlayer film-forming composition comprising a solvent and a polymer with structural units containing a hydroxymethyl group and an ROCH2— group, where R is a monovalent organic group, and a linking group linking the structural units.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If conventional resist underlayer film-forming compositions are used, then the film can be formed on the substrate, but the etching resistance and hardness are insufficient
Solution Approach 1:
The patent modifies the chemical structure of the polymer by introducing specific structural units with hydroxymethyl groups and ROCH2— groups, changing the molecular parameters to achieve both high etching resistance and hardness while maintaining film formation capability
Solution Approach 2:
The composition uses a composite polymer structure combining multiple functional groups (hydroxymethyl, ROCH2—, and linking groups) to create a material that simultaneously provides etching resistance, hardness, and proper film-forming properties
2Ease of manufacture
If conventional resist underlayer film-forming compositions are used, then the film can be formed, but sublimate contamination occurs during processing
Solution Approach 1:
The patent changes the chemical composition parameters of the polymer to reduce sublimation tendency while maintaining film-forming capability, specifically through the use of hydroxymethyl groups and ROCH2— groups that enhance thermal stability
Solution Approach 2:
The patent converts the potential harm of sublimate contamination into a benefit by designing a polymer that undergoes controlled crosslinking during baking, transforming volatile components into a stable, crosslinked network that prevents contamination
3Ease of manufacture
If the polymer structure is simplified for easy manufacture, then the production cost decreases, but the etching resistance and hardness are reduced
Solution Approach 1:
The patent optimizes the polymer structure by selecting specific monomer units and linking groups that can be synthesized through standard chemical processes, achieving a balance between manufacturing ease and performance requirements for etching resistance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves reduced sublimate contamination, improved etching resistance, and high hardness, while maintaining other desirable properties.
Implementation Method 1
a polymer (X) having structural units, which are the same as or different from each other and have a hydroxymethyl group and an ROCH2— group (R is a monovalent organic group or a mixture of two or more thereof), and a linking group linking the structural units
Data Source
AI summary
A novel composition for forming a resist underlayer film contains: a polymer (X) which includes structural units the same as or different from each other and having a hydroxymethyl group and a ROCH2— group (R being a monovalent organic group, or a mixture of these), and a linking group linking the aforementioned structural units; and a solvent.