Undulating Diode Electrode Structure for Higher Current Density
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Solution Overview
Problem
As integrated circuit devices are scaled to smaller dimensions, diode performance is compromised due to reduced current flow, making it challenging to maintain desired operational currents.
Innovation Solution
The development of diodes with an undulating topography between conductive electrodes, featuring pedestals and an intermediate diode structure that enhances current flow by creating band-gap engineered layers and utilizing conductive and insulative materials to facilitate carrier tunneling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If diodes are scaled to smaller dimensions to increase integration density, then device footprint is reduced, but current flow through the diode becomes too small
Solution Approach 1:
The patent applies curvature by forming pedestals with rounded tops and undulating topography in the diode structure. This curved geometry increases the effective surface area for carrier injection and transport, thereby enhancing current flow in scaled-down devices without increasing the device footprint
Solution Approach 2:
The patent introduces vertical dimensionality through pedestals that extend upward from the substrate, creating a three-dimensional structure. This vertical extension provides additional pathways for carrier transport and increases the effective active area, compensating for the reduced planar footprint
2Productivity
If diodes are scaled to smaller dimensions, then integration density is increased, but device performance is reduced
Solution Approach 1:
The patent applies local quality by creating regions with different properties within the diode structure. The pedestals have different doping concentrations and geometries compared to the surrounding regions, optimizing carrier transport locally to maintain overall device performance at scaled dimensions
Solution Approach 2:
The patent uses composite structures combining different semiconductor materials with varying band gaps in the pedestal and diode region. This material composition optimization enables maintained carrier transport efficiency and device performance despite reduced device dimensions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design maintains desired current flow in smaller diodes, enabling effective operation by exploiting undulating topography and band-gap engineered structures to enhance carrier transport and storage.
Implementation Method 1
utilizing conductive and insulative materials to facilitate carrier tunneling
Data Source
AI summary
Some embodiments include methods of forming diodes in which a first electrode is formed to have a pedestal extending upwardly from a base. At least one layer is deposited along an undulating topography that extends across the pedestal and base, and a second electrode is formed over the least one layer. The first electrode, at least one layer, and second electrode together form a structure that conducts current between the first and second electrodes when voltage of one polarity is applied to the structure, and that inhibits current flow between the first and second electrodes when voltage having a polarity opposite to said one polarity is applied to the structure. Some embodiments include diodes having a first electrode that contains two or more projections extending upwardly from a base, having at least one layer over the first electrode, and having a second electrode over the at least one layer.