Upper Layer Film Composition for Semiconductor Pattern Uniformity
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Solution Overview
Problem
Current pattern forming methods for semiconductor manufacturing face challenges in achieving high uniformity of critical dimension (CDU), depth of focus (DOF), and exposure latitude (EL), particularly for ultrafine patterns with hole diameters of 50 nm or less.
Innovation Solution
A pattern forming method involving the formation of a resist film on a substrate, application of an upper layer film composition containing a resin with a C log P(Poly) of 3.0 or more, and specific compounds such as basic compounds, ether bonds, ionic compounds, and radical trapping groups, followed by exposure and development with an organic solvent developer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional pattern forming methods are used, then manufacturing process is simple, but CDU uniformity, DOF, and EL cannot achieve high levels simultaneously
Solution Approach 1:
A topcoat composition is applied to the resist film before exposure to modify its properties. This preliminary action enables the resist to achieve high CDU uniformity, DOF, and EL during subsequent exposure and development, without complicating the overall manufacturing process.
Solution Approach 2:
The topcoat composition contains a polymer with specific properties (polymerization conversion of 5-50%, specific molecular weight range) that changes the physical and chemical parameters of the resist system. These parameter changes enable simultaneous achievement of high CDU uniformity, DOF, and EL while maintaining process simplicity.
2Manufacturing precision
If exposure dose is increased to improve depth of focus, then DOF increases, but exposure latitude decreases
Solution Approach 1:
The topcoat composition modifies the resist's exposure characteristics by incorporating a polymer with controlled polymerization conversion (5-50%). This parameter change enables the system to achieve improved depth of focus while maintaining wide exposure latitude, resolving the trade-off between these two parameters.
3Manufacturing precision
If conventional resist composition is used, then process is simple, but line edge roughness and development defects increase
Solution Approach 1:
The topcoat composition is a composite material containing a polymer with specific properties (polymerization conversion, molecular weight), a basic compound, and a specific compound. This composite structure reduces line edge roughness and development defects while the relatively simple formulation maintains processability.
Solution Approach 2:
The topcoat composition acts as an intermediary layer between the resist film and the development process. It mediates the interaction between the resist and developer, reducing line edge roughness and development defects without requiring complex changes to the overall system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances CDU uniformity, DOF, and EL, enabling the formation of high-quality ultrafine patterns by improving solubility and optical contrast, and reducing development defects and line edge roughness.
Implementation Method 1
a step of developing the exposed resist film with a developer including an organic solvent
Data Source
AI summary
Provided are a pattern forming method including a step of applying a composition for forming an upper layer film, containing a resin having a C log P(Poly) of 3.0 or more and at least one compound selected from the group consisting of (A1) to (A4) described in the specification onto a resist film to form an upper layer film, a step of exposing the resist film, and a step of developing the exposed resist film with a developer including an organic solvent; a resist pattern formed by the pattern forming method; a method for manufacturing an electronic device, including the pattern forming method; and the composition for forming an upper layer film.