UV Cure Module for Low-K Dielectric Integrity
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Solution Overview
Problem
Current semiconductor device metallization processes face challenges in minimizing damage to low dielectric constant (K) materials during etching and cleaning steps, which can alter the dielectric constant values and require additional recovery processes, and often require multiple tools and steps, increasing complexity and cost.
Innovation Solution
Incorporating a UV cure module in the metallization system that allows for partial or full curing of low-K materials using ultraviolet light, enabling reduced damage during etching, integrating UV degas and pre-cleaning processes within the same module to minimize air breaks and maintain dielectric constant integrity, and performing post-barrier UV treatments to purify layers without plasma damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional etching and cleaning processes are used on low-K materials, then the materials can be processed, but damage occurs that alters dielectric constant values
Solution Approach 1:
The low-K material is cured using UV light before etching and cleaning processes. This preliminary curing action hardens the material, making it more resistant to damage during subsequent processing steps while maintaining the desired dielectric constant values.
Solution Approach 2:
The patent changes the physical state of the low-K material from uncured (soft, vulnerable) to cured (hard, resistant) by controlling the curing process parameters. This parameter change enables the material to withstand etching and cleaning without damage.
2Adaptability or versatility
If multiple tools and steps are used for metallization processes, then comprehensive processing is achieved, but complexity and cost increase
Solution Approach 1:
The patent combines multiple metallization process steps (deposition, etching, cleaning, curing) into a single integrated tool. This merging eliminates the need for multiple separate tools and reduces the number of steps, thereby reducing complexity and cost while maintaining comprehensive processing capability.
Solution Approach 2:
The integrated metallization tool is designed to perform multiple functions: depositing conductive materials, etching patterns, cleaning surfaces, and curing low-K materials. This multi-functionality replaces several specialized tools with one universal platform.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces damage to low-K materials, eliminates the need for additional recovery steps, consolidates multiple processes into a single module, and enhances throughput by integrating UV processes, resulting in cost savings and improved semiconductor device manufacturing efficiency.
Implementation Method 1
at least partially curing the low-k dielectric layer in the metallization system using an ultraviolet (UV) light
Implementation Method 2
removing moisture and/or residual gas from the low-k dielectric layer
Data Source
AI summary
Semiconductor device metallization systems and methods are disclosed. In some embodiments, a metallization system for semiconductor devices includes a mainframe, and a plurality of modules disposed proximate the mainframe. One of the plurality of modules comprises a physical vapor deposition (PVD) module and one of the plurality of modules comprises an ultraviolet light (UV) cure module.