UV LED Transparent Conductive Layer Design
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Solution Overview
Problem
Conventional light-emitting diodes (LEDs) face challenges in achieving continuous, thin transparent conductive layers with low contact resistance and high transmittance, particularly in the UV wavelength range, due to discontinuities that arise when film thickness is reduced below a certain threshold.
Innovation Solution
A light-emitting device is designed with a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer for UV light emission, featuring a first transparent conductive layer of metal or metal oxide and a second transparent conductive layer of graphene, where the first layer is continuously formed over the second semiconductor layer without interruptions and has a thickness less than 10 nm, ensuring continuous coverage and low contact resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If the thickness of the first transparent conductive layer is reduced to improve transmittance in the UV wavelength range, then transmittance is improved, but discontinuities occur in the film structure
Solution Approach 1:
The patent changes the material composition and thickness parameters of the first transparent conductive layer, using metal or metal oxide materials with thickness controlled below 10 nm to achieve both high UV transmittance and continuous film structure
Solution Approach 2:
The patent employs a composite structure combining the first transparent conductive layer (metal or metal oxide) with the second transparent conductive layer (graphene), where each layer compensates for the limitations of the other to achieve both continuity and high transmittance
2Illumination intensity
If the thickness of the first transparent conductive layer is reduced to improve transmittance, then transmittance is improved, but contact resistance increases
Solution Approach 1:
The patent optimizes the thickness parameter of the first transparent conductive layer to be below 10 nm while maintaining continuity, and selects specific metal or metal oxide materials that provide both high transmittance and low contact resistance
Solution Approach 2:
The first transparent conductive layer acts as an intermediary between the second semiconductor layer and the second transparent conductive layer, providing both electrical contact and optical transparency functions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables improved transmittance and reduced contact resistance in the UV wavelength range, enhancing the light-emitting device's efficiency and performance by maintaining a continuous film structure while minimizing thickness deviations.
Implementation Method 1
a first transparent conductive layer formed on the second semiconductor layer, the first transparent conductive layer including metal or metal oxide
Implementation Method 2
a second transparent conductive layer formed on the first transparent conductive layer, the second transparent conductive layer including graphene
Implementation Method 3
an active layer formed between the first semiconductor layer and the second semiconductor layer for emitting an UV light
Data Source
AI summary
A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer emitting an UV light, formed between the first semiconductor layer and the second semiconductor layer; a first transparent conductive layer formed on the second semiconductor layer, the first transparent conductive layer including metal oxide; and a second transparent conductive layer formed on the first transparent conductive layer, the second transparent conductive layer including graphene, wherein the first transparent conductive layer is continuously formed over a top surface of the second semiconductor layer, the first transparent conductive layer comprises a thickness smaller than 10 nm.