UV Light-Emitting Device Intermediate Layer and Electrode Segmentation
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Solution Overview
Problem
Ultraviolet light-emitting devices have low light-emitting efficiency due to lower light extraction efficiency and current spreading effects compared to visible light-emitting devices.
Innovation Solution
The ultraviolet light-emitting device incorporates a light-emitting structure with a plurality of light-emitting portions on a conductive type semiconductor layer, including an active layer and a second conductive type semiconductor layer, with an intermediate layer of lower aluminum composition, and specific contact and cover electrodes to enhance light extraction and current spreading.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If traditional LED packaging is used to direct escaping light, then the device structure is simple, but light extraction efficiency is low
Solution Approach 1:
The device is divided into multiple functional regions: a light-emitting region with quantum wells for light generation, a first extracting region with first extraction interfaces for extracting light in a first direction, and a second extracting region with second extraction interfaces for extracting light in a second direction. This segmentation allows light to be extracted through multiple pathways, improving overall extraction efficiency while maintaining structural organization
Solution Approach 2:
The patent transitions from traditional single-direction light extraction to multi-directional extraction by creating extraction interfaces in different spatial dimensions. The first extracting region and second extracting region are positioned to extract light in different directions, effectively utilizing three-dimensional space to improve light extraction efficiency without significantly increasing device complexity
2Ease of manufacture
If conventional electrode configurations are used, then manufacturing is simpler, but current spreading effect is insufficient
Solution Approach 1:
The first electrode is divided into multiple first electrode portions that are selectively positioned over different regions of the semiconductor layer. This segmentation allows current to be injected at multiple locations simultaneously, improving current spreading effect while maintaining a relatively simple overall electrode structure that can be manufactured using standard processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves light-emitting efficiency and light extraction efficiency in ultraviolet light-emitting devices, enhancing their performance compared to traditional designs.
Implementation Method 1
When a bias voltage is applied to the opposite ends of the two doped layers, holes and electrons are injected into the active layer and then recombined therein to generate light
Implementation Method 2
the light-emitting structure includes an intermediate layer formed in an etched region through which the first conductive type semiconductor layer is exposed, the intermediate layer including a lower composition of aluminum than the first conductive type semiconductor layer
Data Source
AI summary
An embodiment discloses an ultraviolet light-emitting device including: a light-emitting structure including a plurality of light-emitting portions disposed on a first conductive type semiconductor layer, the plurality of light-emitting portions including an active layer and a second conductive type semiconductor layer; a first contact electrode disposed on the first conductive type semiconductor layer; a second contact electrode disposed on the second conductive type semiconductor layer; a first cover electrode disposed on the first contact electrode; and a second cover electrode disposed on the second contact electrode, wherein the light-emitting structure includes an intermediate layer formed in an etched region through which the first conductive type semiconductor layer is exposed, the intermediate layer including a lower composition of aluminum than the first conductive type semiconductor layer, wherein the intermediate layer includes a first intermediate region disposed between the plurality of light-emitting portions, and a second intermediate region surrounding edges of the first conductive type semiconductor layer and connected to opposite ends of the plurality of first intermediate regions, wherein the first contact electrode includes a first sub-electrode disposed on the first intermediate region, and a second sub-electrode disposed on the second intermediate region.