UV Nitride Light-Emitting Element With Al-Tuned Quantum Well Structure
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Solution Overview
Problem
Existing nitride semiconductor light-emitting elements do not effectively optimize light output across specific emission wavelength ranges, lacking tailored configurations for improved performance.
Innovation Solution
A nitride semiconductor light-emitting element is designed with a substrate having a c-plane growth surface, featuring an n-type semiconductor layer with specific Al composition ratios and film thicknesses, and active layers with quantum well structures optimized for ultraviolet light emission across different wavelength ranges, including single and multi quantum well configurations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a conventional nitride semiconductor light-emitting element configuration is used, then the device structure is simple, but the light output is insufficient in specific emission wavelength ranges
Solution Approach 1:
The patent applies local quality by optimizing specific layers (n-type semiconductor layer with 1-10 μm thickness and Al composition ratio of 0.05-0.50, active layer with single quantum well structure) to have different properties tailored for UV emission enhancement, rather than uniform structure throughout the device
Solution Approach 2:
The patent utilizes parameter changes by precisely controlling the Al composition ratio (0.05-0.50) and film thickness (1-10 μm) of the n-type semiconductor layer, as well as the quantum well structure parameters in the active layer, to optimize light output for specific UV wavelength ranges
2Adaptability or versatility
If the emission wavelength is changed, then different application requirements are met, but the light output decreases when not optimized for that specific wavelength
Solution Approach 1:
The patent achieves universality by designing a configuration that can effectively emit across multiple UV wavelength ranges (UVA: 315-400 nm, UVB: 280-315 nm, UVC: 200-280 nm) through controlled Al composition and quantum well structures, making the device adaptable to different applications without requiring complete redesign
3Illumination intensity
If the n-type semiconductor layer thickness is increased, then the light output in UVA range is improved, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent applies parameter changes by establishing an optimal thickness range (1-10 μm) and Al composition ratio range (0.05-0.50) for the n-type semiconductor layer, balancing light output enhancement with manufacturability. This quantified parameter specification enables precise control during fabrication while achieving improved UVA emission
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves enhanced light output and reduced full width at half maximum for nitride semiconductor light-emitting elements across specific emission wavelength ranges, improving their performance and productivity.
Implementation Method 1
a nitride semiconductor layer stacked on the growth surface of the substrate, wherein the nitride semiconductor layer comprises an n-type semiconductor layer comprising Al, Ga and N, an active layer being formed on the n-type semiconductor layer on the opposite side to the substrate and comprising a single quantum well structure with one well layer comprising Al, Ga and N
Data Source
AI summary
A nitride semiconductor light-emitting element emits ultraviolet light at a central wavelength of more than 320 nm and not more than 365 nm. The nitride semiconductor light-emitting element includes a substrate having a c-plane as a growth surface and a nitride semiconductor layer stacked on the growth surface of the substrate. The nitride semiconductor layer includes an n-type semiconductor layer, and an active layer being formed on the n-type semiconductor layer on the opposite side to the substrate and comprising a single quantum well structure with one well layer. The n-type semiconductor layer has an Al composition ratio of not more than 50% and a film thickness of more than 2 μm. A composition difference obtained by subtracting an Al composition ratio of the well layer from the Al composition ratio of the n-type semiconductor layer is not less than 22%.