Resist Pattern Transfer Using UV Hardening and Phosphoric Etching
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Solution Overview
Problem
In semiconductor manufacturing, the miniaturization of resist patterns and the demand for thin resist films lead to issues where the resist pattern may disappear during dry etching, preventing effective transfer to underlying organic and inorganic films, resulting in pattern collapse and defective transfers.
Innovation Solution
A substrate processing method involving the sequential stacking of an organic film, a silicon-containing inorganic film, and a resist pattern, where the resist pattern is insolubilized using ultraviolet rays and then transferred to the organic film through a phosphoric acid solution-based etching process, allowing for precise pattern transfer without pattern collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dry etching is used to transfer resist patterns to underlying films, then the etching process can be performed, but the resist pattern may disappear during etching causing pattern collapse and defective transfers
Solution Approach 1:
The patent introduces a silicon-containing inorganic film as an intermediary layer between the resist pattern and the organic film. This intermediary layer protects the resist pattern from disappearing during etching while enabling effective pattern transfer to the underlying organic film through selective removal by phosphoric acid solution.
Solution Approach 2:
The patent changes the chemical parameters of the etching process by using phosphoric acid solution instead of conventional dry etching chemicals. This parameter change allows selective removal of the silicon-containing inorganic film while preserving the resist pattern, thereby preventing pattern collapse and enabling reliable pattern transfer.
2Length of moving object
If thin resist films are used for miniaturization, then the resist pattern size can be reduced, but the resist pattern becomes prone to collapse and disappearance during etching
Solution Approach 1:
The silicon-containing inorganic film serves as a protective intermediary that supports thin resist patterns during the etching process. This intermediary layer prevents the collapse and disappearance of thin resist patterns while enabling effective pattern transfer to the underlying organic film.
Solution Approach 2:
The patent applies preliminary action by forming the silicon-containing inorganic film before the etching process. This preliminary layer provides structural support to thin resist patterns prior to etching, preventing collapse during the subsequent phosphoric acid treatment and enabling successful pattern transfer.
3Manufacturing precision
If conventional etching methods are used without ultraviolet irradiation, then the process is simpler, but the resist pattern cannot be effectively insolubilized for precise pattern transfer
Solution Approach 1:
The patent changes the physical state of the resist pattern by applying ultraviolet irradiation, which insolubilizes the resist pattern. This parameter change enables precise pattern transfer by preventing resist dissolution during the phosphoric acid etching process, achieving high manufacturing precision despite the added process step.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the appropriate transfer of resist patterns to organic films, preventing pattern collapse and ensuring accurate pattern transfer even with thin resist patterns, enhancing the reliability of semiconductor manufacturing processes.
Implementation Method 1
insolubilizing a resist pattern with respect to a phosphoric acid solution by irradiating a substrate, on which an organic film, a silicon-containing inorganic film, and the resist pattern are sequentially stacked in this order from below, with ultraviolet rays
Implementation Method 2
removing the silicon-containing inorganic film exposed from the resist pattern by supplying the phosphoric acid solution to the substrate after the insolubilizing the resist pattern
Data Source
AI summary
A substrate processing method includes: insolubilizing a resist pattern with respect to a phosphoric acid solution by irradiating a substrate, on which an organic film, a silicon-containing inorganic film, and the resist pattern are sequentially stacked in this order from below, with ultraviolet rays; after the insolubilizing the resist pattern, removing the silicon-containing inorganic film exposed from the resist pattern by supplying the phosphoric acid solution to the substrate; and after the removing the silicon-containing inorganic film, transferring the resist pattern to the organic film by performing an etching process on the substrate.