Vacuum Channel Transistor Layout for Low-Resistance Source Connection
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Solution Overview
Problem
In vacuum channel field effect transistors, the substrate resistance between the insulating film and the substrate interface increases the on-resistance, deteriorating transistor characteristics, requiring complex wiring connections to the source power supply.
Innovation Solution
A vacuum channel electronic element with a conductive layer of lower resistivity than the semiconductor layer, extending beyond the laminated body, facilitates easy connection to the power supply and improves charge carrier movement between the semiconductor, gate, and drain layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the source power supply is connected to the backside surface of the substrate, then the vacuum channel field effect transistor can be formed with the substrate interface as the source, but the substrate resistance increases the on-resistance and deteriorates transistor characteristics
Solution Approach 1:
The conductive layer extends from the interface region laterally beyond the laminated body to the backside surface, creating a three-dimensional conductive path that connects the source region to external wiring. This dimensional extension resolves the contradiction by providing both the interface source configuration and low-resistance external connection.
Solution Approach 2:
The conductive layer acts as an intermediary element between the substrate interface (source) and the backside surface wiring. It mediates the electrical connection while maintaining low resistance, thus improving transistor characteristics without compromising the manufacturing structure.
2Ease of manufacture
If the source power supply is connected to the backside surface of the substrate, then the vacuum channel field effect transistor can be formed with the substrate interface as the source, but complex wiring connections are required
Solution Approach 1:
The conductive layer merges the source region at the interface with the backside surface contact region into a single continuous conductive structure. This integration simplifies wiring connections by eliminating the need for separate source wiring and reducing the number of discrete connection points.
3Productivity
If a conductive layer with lower resistivity is provided on the semiconductor layer surface, then charge carrier movement is improved and source-drain current increases, but the device structure becomes more complex
Solution Approach 1:
The conductive layer serves multiple functions simultaneously: it acts as a source electrode, provides low-resistance electrical connection, facilitates charge carrier emission, and extends to the backside surface for wiring connection. This multi-functionality justifies the additional structural element by delivering multiple benefits from a single component.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces the complexity of wiring connections and enhances the source-drain current by allowing efficient charge carrier emission and movement, improving the overall performance of the vacuum channel electronic element.
Implementation Method 1
a conductive layer that is conductive, provided on a surface of the semiconductor layer, in contact with the first side walls in the space, and has a lower resistivity than that of the semiconductor layer
Implementation Method 2
charge carriers in an induced inversion or accumulation layer of the semiconductor layer move into the conductive layer and travel to the drain layer in the space
Data Source
AI summary
A laminated body is provided in a circumferential shape with a gap formed in a part of a circumferential direction on a semiconductor layer. In the laminated body, a first insulating layer, a gate layer, a second insulating layer, and a drain layer are layered in this order from the semiconductor layer side. An impurity diffusion layer is formed on a surface of the semiconductor layer, and a backside electrode on a backside surface. The impurity diffusion layer extends from a position in contact with side walls in a channel space to an outside of the laminated body through a region corresponding to the gap on the surface of the semiconductor layer. A portion of the impurity diffusion layer beyond the laminated body is a contact region to which a wiring for applying a predetermined voltage is connected. A cover layer made of an insulating material is formed in an upper portion and a periphery of the annular portion including the laminated body and the gap.