Vacuum Multi-Chamber Halide Scavenging for Semiconductor Processing
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Solution Overview
Problem
Existing semiconductor processing technologies face challenges in reducing film contamination and improving device quality due to moisture interaction with fluorine or halides remaining on silicon oxide surfaces, leading to aging defects and quality issues.
Innovation Solution
The development of advanced substrate processing systems and methods that include multiple processing chambers and a treatment chamber with plasma and ultraviolet light capabilities, allowing for controlled etching and scavenging operations to remove contaminants and prevent moisture interaction, maintaining a moisture-free environment to minimize halide contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If wet HF etch is used to remove silicon oxide, then etching selectivity is improved, but moisture contamination and aging defects increase
Solution Approach 1:
The patent extracts the harmful moisture from the processing environment by implementing a vacuum-based multi-chamber system. Substrates are transferred through vacuum chambers that prevent moisture ingress, effectively removing the moisture contamination source while maintaining the wet etching process benefits.
Solution Approach 2:
The patent introduces vacuum transfer chambers as intermediary environments between the wet etching process and subsequent processing steps. These chambers act as mediators that prevent direct exposure to atmospheric moisture while allowing substrate transfer, thus eliminating aging defects without compromising etching selectivity.
2Manufacturing precision
If dry etching with local plasma is used to penetrate constrained trenches, then etching capability is improved, but substrate damage from electric arcs increases
Solution Approach 1:
The patent removes the harmful electric arcs from the etching process by extracting plasma generation to a remote source. The plasma is generated in a separate chamber and the reactive species are transported to the substrate, eliminating direct arc contact with the substrate while maintaining etching capability.
Solution Approach 2:
The patent replaces the direct plasma-substrate interaction mechanism with a remote plasma delivery system. Instead of applying plasma directly to the substrate (which causes arcs), the system uses gas flow to transport reactive species, substituting a gentler transport mechanism for the harsh direct plasma application.
3Device complexity
If multiple processing steps are performed in atmospheric conditions, then process simplicity is improved, but film contamination and aging defects increase
Solution Approach 1:
The patent combines multiple processing chambers into a single vacuum-based processing system. By merging deposition, etching, and treatment functions into interconnected vacuum chambers, the system maintains process simplicity through integration while preventing contamination via vacuum isolation.
Solution Approach 2:
The patent creates an inert vacuum environment throughout the processing system to replace atmospheric conditions. This inert environment prevents moisture-related aging defects and film contamination while allowing all processing steps to be performed in sequence without breaking vacuum, thus preventing contamination without significantly increasing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These systems and methods effectively reduce halide contamination and aging defects, improving the quality and reliability of semiconductor devices by maintaining a controlled environment that limits moisture exposure and enhances contaminant removal processes.
Implementation Method 1
The treatment chamber may include components configured to generate a direct plasma within the treatment chamber
Implementation Method 2
The treatment chamber may also include components configured to generate an ultraviolet light treatment within the treatment chamber
Data Source
AI summary
Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.