Variable-Capacitance Memory Device for Low-Voltage Threshold Modulation
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Solution Overview
Problem
Conventional charge trapping memory devices require large program/erase power (greater than 5 volts) to achieve MOSFET threshold voltage modulation, which is inefficient and consumes more energy.
Innovation Solution
The use of a variable-capacitance node dielectric material layer and a control gate electrode in conjunction with an intermediate electrode forms a variable-capacitance capacitor, allowing for resistive switching to modulate the threshold voltage of a MOSFET, thereby reducing the power consumption of program/erase operations to less than 5 volts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional charge trapping memory devices use large program/erase power (greater than 5 volts) to achieve MOSFET threshold voltage modulation, then the threshold voltage modulation is achieved, but the power consumption increases
Solution Approach 1:
The gate structure is segmented into multiple components: a control gate electrode, an intermediate electrode, and a variable-capacitance node dielectric layer. This segmentation allows the threshold voltage modulation function to be distributed across these components, enabling lower power operation by the control gate while the intermediate electrode and variable capacitor work together to achieve the required voltage modulation effect
Solution Approach 2:
An intermediate electrode is introduced between the control gate electrode and the channel region, acting as an intermediary element. This intermediate electrode, combined with the variable-capacitance node dielectric, mediates the voltage transmission from the control gate to the channel, allowing the control gate to operate at lower voltages while still achieving effective threshold voltage modulation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces the power required for program/erase operations in memory devices, enhancing energy efficiency and operational performance.
Implementation Method 1
allowing for resistive switching to modulate the threshold voltage of a MOSFET
Implementation Method 2
The threshold voltage of a field effect transistor is affected by the capacitance of the gate electrode. If the gate voltage is higher than the threshold voltage, the field effect transistor is turned on. If the gate voltage is lower than the threshold voltage, the field effect transistor is turned off.
Data Source
AI summary
A memory device includes a field effect transistor and a variable-capacitance capacitor. A gate structure includes a gate dielectric and an intermediate electrode. The variable-capacitance capacitor includes a lower capacitor plate comprising the intermediate electrode, an upper capacitor plate comprising a control gate electrode, and a variable-capacitance node dielectric and including an electrical-field-programmable metal oxide material. The electrical-field-programmable metal oxide material provides a variable effective dielectric constant, and a data bit may be stored as a dielectric state of the variable-capacitance node dielectric in the memory device. The variable-capacitance node dielectric provides reversible electrical field-dependent resistivity modulation, or reversible electrical field-dependent movement of metal atoms therein.