Heat-Resistant Memory Copying for Variable Resistance Memory Assembly
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Solution Overview
Problem
Variable resistance memory devices are susceptible to data loss due to high temperatures during the assembly of electronic devices, leading to reduced reliability and increased defects.
Innovation Solution
Storing system code in a heat-resistant NAND flash memory and copying it into a heat-vulnerable variable resistance memory after assembly, using a control circuit and bootloader to execute the transfer and update a copy flag for efficient data initialization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If variable resistance memory devices are used for data storage, then memory capacity and cost are improved, but reliability deteriorates due to heat sensitivity during assembly
Solution Approach 1:
The system code is preliminarily stored in a heat-resistant first nonvolatile memory (NAND flash) before the assembly heating process. This preliminary storage ensures that the system code is preserved during subsequent heating operations, and can be copied to the variable resistance memory after the heating is complete, thus preventing thermal data loss.
Solution Approach 2:
The first nonvolatile memory (NAND flash) acts as an intermediary storage device between the heat source and the second nonvolatile memory (variable resistance memory). It temporarily holds the system code during the heating process, protecting it from thermal damage, and enables safe transfer of the code to the heat-sensitive memory after cooling.
2Ease of manufacture
If system code is stored in variable resistance memory from the beginning, then data initialization is simplified, but data loss occurs during high temperature exposure
Solution Approach 1:
The system code is preliminarily stored in a heat-resistant first nonvolatile memory (NAND flash) before the assembly heating process. This preliminary storage ensures that the system code is preserved during subsequent heating operations, and can be copied to the variable resistance memory after the heating is complete, thus preventing thermal data loss.
Solution Approach 2:
The system code is copied from the first nonvolatile memory (NAND flash) to the second nonvolatile memory (variable resistance memory) after the heating process. This copying operation ensures that the system code is transferred to the heat-sensitive memory only after it has been protected from thermal damage, maintaining data integrity while enabling simplified initialization.
3Reliability
If system code is copied after heating, then thermal data loss is prevented, but additional copying steps increase manufacturing complexity
Solution Approach 1:
The control circuit automatically detects whether the system code has been copied to the second nonvolatile memory and performs the copying operation only when necessary. This self-service mechanism reduces manual intervention and simplifies the manufacturing process while ensuring data integrity, as the system autonomously manages the code transfer based on its own state.
Solution Approach 2:
The control circuit uses feedback from detecting the presence or absence of the system code in the second nonvolatile memory to determine whether copying is needed. This feedback mechanism prevents unnecessary copying operations and automates the process, reducing manufacturing complexity while maintaining reliable data transfer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method prevents thermal data loss in variable resistance memory during assembly by using a heat-resistant memory to store and transfer system code, ensuring reliable data initialization and reducing defects.
Implementation Method 1
The first nonvolatile memory and a second nonvolatile memory are heated during assembly of an electronic device including the first nonvolatile memory and a second nonvolatile memory. The heating is to a temperature sufficient to change a state of at least some memory cells in the second nonvolatile memory device.
Data Source
AI summary
A system code is stored in a first nonvolatile memory. The first nonvolatile memory and a second nonvolatile memory are heated during assembly of an electronic device including the first nonvolatile memory and a second nonvolatile memory. The heating is to a temperature sufficient to change a state of at least some memory cells in the second nonvolatile memory device. After the heating, the system code stored in the first nonvolatile memory is copied into the second nonvolatile memory. The first nonvolatile memory may he less vulnerable to temperature-related data alteration than the second nonvolatile memory. For example, the first nonvolatile memory may include a NAND flash memory and the second nonvolatile memory may include a variable resistance memory.


