Variable-Diameter Through-Via Substrate for Lower 20 GHz Loss
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Solution Overview
Problem
High-frequency transmission losses in through-electrode substrates used in LSI devices are becoming problematic due to high integration, high density, and miniaturization requirements, necessitating a solution that reduces signal loss while maintaining high-frequency performance.
Innovation Solution
A through-electrode substrate with a substrate having a through-hole with varying diameters, an adhesion layer, and a conductive layer, where the hole diameter at the narrowed part is greater than or equal to 10 μm, and the conductive layer contains copper, with a dielectric loss tangent of 0.0003 to 0.0005 at 20 GHz, and optionally filled with a resin material or sealed with conductive material to reduce transmission loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the through-hole diameter is reduced for high density and miniaturization, then the integration density is improved, but the high-frequency transmission loss increases
Solution Approach 1:
The through-hole is designed with non-uniform diameter along its length, creating different local geometries: a narrower upper portion for high density and a wider lower portion for reduced transmission loss. This local variation in geometry allows simultaneous optimization of both density and signal transmission characteristics.
Solution Approach 2:
The hole diameter parameter is changed along the thickness direction of the substrate, transitioning from a smaller diameter at the upper portion to a larger diameter at the lower portion. This parameter variation enables the through-hole to satisfy both high-density requirements and low transmission loss requirements at different locations.
2Length of moving object
If the through-hole diameter is reduced for miniaturization, then the size is reduced, but the signal transmission quality deteriorates
Solution Approach 1:
Different sections of the through-hole serve different functions: the upper narrow section provides miniaturization and high density, while the lower wide section ensures good signal transmission quality by reducing resistance and impedance effects.
Solution Approach 2:
Instead of uniformly reducing the hole diameter in all directions, the invention varies the diameter along the vertical dimension (thickness direction), creating a tapered or stepped structure that maintains small overall size while providing adequate transmission path area.
3Loss of energy
If the through-hole diameter is increased to reduce transmission loss, then the transmission characteristics are improved, but the integration density decreases
Solution Approach 1:
The through-hole diameter is optimized locally at different positions: smaller diameter in the upper portion where space is constrained to maintain high density, and larger diameter in the lower portion where space is available to reduce transmission loss.
Solution Approach 2:
The hole diameter is made dynamic rather than static, varying continuously or in steps along the thickness direction to adapt to different functional requirements at different locations within the substrate.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces transmission loss at high frequencies, enabling high-density and miniaturized through-electrode substrates with improved high-frequency characteristics by optimizing the through-hole geometry and material composition.
Implementation Method 1
The through-electrode has an adhesion layer and a conductive layer in order from a side face of the through-hole toward a center of the through-hole
Implementation Method 2
The conductive layer may contain copper (Cu)
Data Source
AI summary
A through-electrode substrate including a through-electrode adapted for high density and miniaturization and capable of reducing a transmission loss at a high frequency is provided.A through-electrode substrate according to the present disclosure includes a substrate having a first face and a second face opposite to the first face and having a through-hole extending from the first face to the second face, and a through-electrode located in the through-hole of the substrate. A hole diameter of the through-hole varies according to a position in a thickness direction of the substrate. The through-hole has a minimum diameter part having a minimum hole diameter of greater than or equal to 10 μm. A maximum hole diameter of the through-hole is less than or equal to 60 μm. The through-electrode has an adhesion layer and a conductive layer in order from a side face of the through-hole toward a center of the through-hole. A dielectric loss tangent of the substrate at a frequency of 20 GHz is greater than or equal to 0.0003 and less than or equal to 0.0005.