Variable-Width Bonding Pads for Low-Resistance Semiconductor Bonding
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving improved bonding characteristics and heat dissipation while minimizing resistance and defects in electrical connections through bonding pads.
Innovation Solution
A semiconductor device structure is designed with bonding pads that have varying widths and heights, allowing for efficient coupling of two semiconductor structures through dielectric layers, utilizing covalent bonding to enhance bonding and reduce electrical path resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If bonding pads have uniform width throughout their structure, then manufacturing is simple, but bonding characteristics and heat dissipation are insufficient
Solution Approach 1:
The bonding pad structure implements local quality by having different width characteristics in different regions: the first width at the first portion, the second width at the second portion, and the third width at the third portion. This non-uniform width distribution optimizes bonding characteristics at the bonding interface while maintaining electrical connectivity, resolving the contradiction between bonding reliability and structural simplicity.
2Strength
If bonding pad width is increased to improve bonding characteristics, then bonding strength improves, but electrical path resistance decreases
Solution Approach 1:
The bonding pad employs local quality by varying its width across different portions: wider sections (first width) provide enhanced bonding strength and heat dissipation, while other sections maintain appropriate widths for optimal electrical conductivity. This spatial variation in geometry allows simultaneous optimization of both mechanical bonding strength and electrical performance.
Solution Approach 2:
The bonding pad structure extends into multiple dimensions with varying widths at different heights and positions. The three-dimensional configuration allows the pad to achieve both high bonding strength through increased material volume and low resistance through optimized conductive pathways, effectively resolving the contradiction between strength and electrical performance.
3Reliability
If bonding pads are made larger to reduce resistance, then electrical conductivity improves, but device area increases
Solution Approach 1:
The bonding pad structure uses local quality by concentrating wider sections only where needed for bonding strength and heat dissipation, while other portions maintain compact dimensions. This selective width variation reduces the overall device area footprint while preserving low electrical resistance through strategically placed wider conductive regions.
Data Source
AI summary
A semiconductor device includes: a first semiconductor structure including a stacked structure of a first dielectric layer and a first bonding dielectric layer; a second semiconductor structure including a stacked structure of a second dielectric layer and a second bonding dielectric layer; and a bonding pad penetrating the stacked structure of the first dielectric layer and the first bonding dielectric layer, and the stacked structure of the second dielectric layer and the second bonding dielectric layer, wherein the first bonding dielectric layer and the second bonding dielectric layer contact each other, and a first width of a first portion of the bonding pad penetrating the first dielectric layer is greater than each of a second width of a second portion of the bonding pad penetrating the first bonding dielectric layer, and a third width of a third portion of the bonding pad penetrating the second bonding dielectric layer.