Variable-Width Source/Drain Contact Separation for Short-Channel Control

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Solution Overview

Problem

Existing semiconductor devices face challenges in effectively separating source/drain contacts, which can lead to electrical interference and reduced performance due to the short channel effect.

Innovation Solution

The semiconductor device incorporates a contact separation layer with varying widths to separate the source/drain contacts, improving electrical isolation and mitigating the short channel effect.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of moving object

If source/drain contacts are placed close together to reduce device area, then device density increases, but electrical interference and short channel effect worsen

Engineering Contradiction:

Improvedevice areaVSAvoidelectrical isolation

Core Design Contradiction:

Area of moving objectVSReliability

Solution Approach 1:

An insulating layer is introduced as an intermediary element between adjacent source/drain contacts. This mediator provides electrical isolation while allowing the contacts to remain in close proximity, thus maintaining small device area while preventing electrical interference and short channel effect

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The space between source/drain contacts is segmented into distinct regions by the insulating layer, creating separate electrical zones. This segmentation allows independent control and isolation of each contact region, improving electrical reliability without increasing overall device footprint

Inventive Principle:

Principle #1Segmentation

2Reliability

If gate length is increased to control current and mitigate short channel effect, then electrical control improves, but device area increases

Engineering Contradiction:

Improvecurrent controlVSAvoiddevice area

Core Design Contradiction:

ReliabilityVSArea of moving object

Solution Approach 1:

The insulating layer is selectively positioned in specific local regions between source/drain contacts rather than uniformly across the entire device. This local quality approach provides current control enhancement exactly where needed at the contact interfaces, without unnecessarily increasing the overall gate length or device area

Inventive Principle:

Principle #3Local quality

Data Source

PatentUS20250063788A1Semiconductor device and method of fabricating the same

Publication Date: 2025.02.20 SAMSUNG ELECTRONICS CO LTD

AI summary

The semiconductor device includes a substrate, first and second active patterns extending in a first direction, the second active pattern spaced apart from the first active pattern in a second direction different from the first direction, a gate electrode extending in the second direction, a first and second source/drain region each on one side of the gate electrode, a first and second source/drain contact each extending in the second direction on and connected to the first and second source/drain region respectively, and a contact separation layer separating the first and second source/drain contacts, the contact separation layer including a first portion and a second portion on first portion both between the first and second source/drain regions, wherein a width of the first portion of the contact separation layer in the first direction is greater than a width of the second portion of the contact separation layer in the first direction.