Vertical BJT Fin Structure for Scaled MOSFET Integration
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Solution Overview
Problem
As semiconductor devices are scaled down, the operating characteristics of MOSFETs deteriorate, and existing technologies face challenges in achieving high integration and compatibility with multi-bridge channel field effect transistors while maintaining effective electrical performance.
Innovation Solution
A semiconductor device with a vertical bipolar junction transistor structure is designed, featuring a well region, impurity region, and active fins with specific conductivity types, along with connection patterns and gate structures, to enhance electrical characteristics and compatibility with multi-bridge channel field effect transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If MOSFETs are scaled down to achieve high integration, then device density increases, but operating characteristics deteriorate
Solution Approach 1:
The patent transitions from planar MOSFET structures to vertical bipolar junction transistor structures, utilizing the vertical dimension to achieve high integration density while maintaining excellent operating characteristics. The vertical BJT structure with emitter, base, and collector regions arranged vertically allows for compact integration without the scaling-induced performance degradation that plagues planar MOSFETs.
Solution Approach 2:
The patent employs precise control of impurity concentrations and conductivity types in different regions (emitter, base, collector) to optimize device performance. By carefully adjusting doping parameters and creating specific conductivity type distributions, the vertical BJT achieves superior operating characteristics while maintaining high integration density.
2Reliability
If vertical bipolar junction transistor structure is implemented to improve electrical characteristics, then device performance improves, but structure complexity increases
Solution Approach 1:
The vertical BJT structure is divided into distinct functional regions (emitter, base, collector) with specific impurity concentrations and conductivity types. This segmentation allows each region to be independently optimized for its specific function while maintaining overall device simplicity and manufacturability.
Solution Approach 2:
The vertical BJT structure serves multiple functions within a single device architecture: it provides high integration density, excellent electrical characteristics, and compatibility with multi-bridge channel field effect transistors. This multi-functionality reduces the need for separate specialized components, thereby simplifying the overall system complexity.
3Adaptability or versatility
If compatibility with multi-bridge channel field effect transistors is achieved, then integration versatility improves, but manufacturing precision requirements increase
Solution Approach 1:
The patent implements different impurity concentrations and conductivity types in specific local regions (emitter, base, collector) to achieve compatibility with multi-bridge channel field effect transistors. By optimizing the local properties of each region rather than requiring uniform high precision throughout the entire structure, the design achieves versatility while maintaining manufacturability.
Data Source
AI summary
A semiconductor device including a well region in a substrate, an impurity region in the well region, a first active fin on the impurity region, a second active fin on the well region, and a connection pattern penetrating the second active fin and connected to the well region may be provided. The substrate and the impurity region include impurities having a first conductivity type. The well region includes impurities having a second conductivity type different from the first conductivity type. The first active fin includes a plurality of first semiconductor patterns that are spaced apart from each other in a direction perpendicular to a top surface of the substrate. The first semiconductor patterns and the impurity region include impurities having the first conductivity type.