Vertical Channel Transistor Layout With Single Back Gate Control
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Solution Overview
Problem
As semiconductor devices are miniaturized, it becomes increasingly difficult to maintain desired performance levels, particularly in forming reliable and stable transistors.
Innovation Solution
A semiconductor device design featuring a substrate with spaced-apart gate structures and a single back gate structure, incorporating vertical channel regions and a back gate control circuit to stabilize transistor operations and enhance integration and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If element sizes are reduced to increase integration density, then device miniaturization is achieved, but transistor performance deteriorates
Solution Approach 1:
The patent transitions from planar channel structures to vertical channel structures, utilizing the vertical dimension to maintain channel length and transistor performance while reducing the planar footprint. The vertical channel region extends perpendicular to the substrate surface, allowing compact integration without sacrificing electrical characteristics.
Solution Approach 2:
The gate structure is divided into multiple segments including a first gate structure, a second gate structure, and a back gate structure positioned at different vertical levels. This segmented approach allows independent control of different channel regions, enabling precise threshold voltage management and improved transistor performance in the vertical configuration.
2Area of moving object
If vertical channel structures are implemented, then integration density is improved, but gate control complexity increases
Solution Approach 1:
The gate control is segmented into multiple independent gate structures positioned at different vertical levels. The first gate structure controls a first channel region, the second gate structure controls a second channel region, and the back gate structure provides additional control. This segmentation allows sophisticated channel control while maintaining a relatively simple overall device architecture.
Solution Approach 2:
The multiple gate structures serve multiple functions: they control different regions of the vertical channel, enable independent threshold voltage adjustment, provide electrostatic control, and allow for flexible device operation modes. This multi-functionality reduces the need for additional separate control mechanisms.
Data Source
AI summary
A semiconductor device includes a substrate, a first gate structure and a second gate structure on the substrate, a single back gate structure between the first gate structure and the second gate structure, a first structure including a first vertical channel region extending in a vertical direction, at least a portion of the first vertical channel region between the first gate structure and the single back gate structure, and a second structure including a second vertical channel region extending in the vertical direction. The second structure is spaced apart from the first structure, and at least a portion of the second vertical channel region is between the second gate structure and the single back gate structure.