Vertical Channel Semiconductor Structure for Reliable Bit Line Integration
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving improved electrical properties and increased reliability, particularly with the integration of vertical channel transistors.
Innovation Solution
A semiconductor device is designed with a substrate that includes a device isolation pattern and an active region, featuring a bit line, a semiconductor pattern, a growth mask layer, a word line, and a gate dielectric pattern. The semiconductor pattern is epitaxially grown from the bit line, and the growth mask layer is positioned to ensure proper contact and alignment with the semiconductor pattern and word line.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If vertical channel transistors are integrated to increase integration and current driving capability, then electrical properties and reliability are improved, but device complexity and fabrication difficulty increase
Solution Approach 1:
The patent transitions from planar transistor architecture to vertical channel architecture, moving the channel direction from the plane of the substrate to the vertical dimension. This dimensional change enables increased integration density and improved current driving capability while maintaining electrical properties, as the vertical channel allows for better control and higher packing density without increasing planar footprint complexity
2Productivity
If vertical channel transistors are used to increase integration, then manufacturing yield should be maintained, but fabrication process complexity increases
Solution Approach 1:
The fabrication process is divided into distinct sequential stages: forming the bit line, depositing the growth mask layer, epitaxially growing the semiconductor pattern, and forming the gate dielectric pattern. This segmentation of the fabrication process into manageable steps simplifies control and monitoring, enabling maintenance of manufacturing yield despite the increased complexity of vertical channel transistor fabrication
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves enhanced electrical properties and increased reliability by utilizing vertical channel transistors, which improve integration, resistance, and current driving capability, while maintaining manufacturing yield.
Implementation Method 1
a semiconductor pattern on the bit line
Data Source
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AI summary
Disclosed is a semiconductor device comprising a substrate that includes a device isolation pattern and an active region, a bit line that extends in a first direction on the substrate, a semiconductor pattern on the bit line, a growth mask layer on the bit line and having a sidewall in contact with the semiconductor pattern, a word line on the bit line and extending in a second direction that intersects the first direction, and a gate dielectric pattern between the word line and the semiconductor pattern. A top surface of the growth mask layer is at a level higher than that of a bottom surface of the semiconductor pattern.