Vertical Channel Gate Structure for Dielectric-Metal Isolation
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Solution Overview
Problem
Conventional planar MOS transistors face challenges in scaling down due to difficulties in preventing direct contact between the gate dielectric layer and metal, leading to high-resistance products, which affects the performance of semiconductor devices.
Innovation Solution
A semiconductor device with a vertical channel structure is designed, featuring a barrier layer between the gate dielectric layer and gate electrode, and an upper dielectric layer with a protrusion that self-aligns with the barrier layer to prevent direct contact, thereby isolating the gate dielectric from metal and improving performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the gate dielectric layer directly contacts the gate electrode metal, then the device structure is simplified, but high-resistance products are generated and device performance deteriorates
Solution Approach 1:
The patent introduces an intermediate layer between the gate dielectric layer and gate electrode metal to prevent direct contact. This intermediate structure acts as a mediator that eliminates the harmful interaction between the dielectric material and metal, thereby preventing high-resistance product formation while maintaining device performance and reliability.
2Reliability
If the gate dielectric layer is isolated from metal by adding barrier layers and protrusions, then device performance is improved, but device structure becomes more complex
Solution Approach 1:
The patent utilizes the protrusion structure extending from the substrate surface into the gate dielectric layer to create a three-dimensional isolation geometry. This dimensional approach allows the barrier layer to be positioned strategically without requiring extensive lateral space, achieving effective isolation while controlling structural complexity through vertical arrangement rather than horizontal expansion.
Data Source
AI summary
A semiconductor device includes a source electrode, a drain electrode, a gate electrode, a channel structure, a gate dielectric layer, a barrier layer and an upper dielectric layer. The source electrode, the gate electrode, and the drain electrode are disposed in sequence. The channel structure is disposed between the drain electrode and the source electrode and is connected the drain electrode and the source electrode. The gate dielectric layer is disposed between the channel structure and the gate electrode. The barrier layer is disposed between the gate electrode and the gate dielectric layer. The upper dielectric layer is disposed between the drain electrode and the source electrode, and which includes a protrusion protruding toward the channel structure and sandwiched between the gate electrode and the drain electrode. The protrusion at least covers a part of a top surface of the barrier layer.