Vertically Conducting Deep UV LED Thermal Management
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Solution Overview
Problem
Deep UV LEDs face inefficiencies and heat-related issues due to high aluminum content, leading to current crowding and premature saturation, which degrade performance and shorten device lifetimes.
Innovation Solution
A vertically conducting deep UV LED structure with a highly thermally conductive submount and specific layer arrangements, including p-type, quantum well, and n-type layers, to enhance electrical conduction and thermal dissipation, mitigating current crowding and heat generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If high aluminum content is used in n-AlGaN epilayers to achieve proper deep UV emission wavelength, then the emission wavelength is correct, but the doping efficiency decreases significantly causing high resistance and current crowding
Solution Approach 1:
The patent changes the material composition parameter by using AlInGaN instead of AlGaN, adding indium to modify the band structure and improve doping efficiency while maintaining the required emission wavelength through compositional optimization
Solution Approach 2:
The patent employs composite material structure by combining AlInGaN with different aluminum compositions in specific layers (higher Al content in barrier layers, lower Al content in contact layers) to achieve both proper wavelength emission and improved electrical conduction
2Illumination intensity
If high aluminum content is used in epilayers to achieve proper wavelength emission, then the emission wavelength is correct, but current crowding occurs near the n-contact perimeter causing premature saturation
Solution Approach 1:
The patent applies local quality by having different aluminum compositions in different regions: higher Al content in quantum well barrier layers for wavelength control, and lower Al content in contact layers and n-type layers for improved current distribution and reduced crowding effects
3Device complexity
If conventional submounts are used in LEDs, then the device structure is simple, but thermal dissipation is insufficient leading to extreme device self heating
Solution Approach 1:
The patent changes the thermal conductivity parameter of the submount from conventional low values to at least 100 W/mK, transforming the thermal management capability while maintaining structural simplicity through direct bonding of the LED structure to the high thermal conductivity submount
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves illumination efficiency and reduces heat generation, extending the lifespan and performance of deep UV LEDs by forcing current to pass vertically and utilizing high thermal conductivity substrates for effective heat dissipation.
Implementation Method 1
a highly thermally conductive submount wherein the highly conductive submount has a thermal conductivity of at least 100 W/m0K
Implementation Method 2
deep ultra-violet light emitting diodes, with peak emission wavelengths of 200-365 nm
Data Source
AI summary
A vertically conducting LED comprising, in a layered arrangement: a highly thermally conductive submount wherein the highly conductive submount has a thermal conductivity of at least 100 W/m0K; a p-type layer comprising Al1-x-yInyGax N wherein 0≦x≦1 and 0≦y≦1; a quantum well layer comprising Al1-x-yInyGaxN wherein 0≦x≦1 and 0≦y≦1; an n-type layer comprising Al1-x-yInyGaxN wherein 0≦x≦1 and 0≦y≦1; and an n-type contact layer wherein the LED has a peak emission at 200-365 nm.