Vertical Gate-All-Around Memory Cell Structure for Higher Density
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Solution Overview
Problem
The electrical performance of access transistors and capacitors in dynamic memory arrays is low, hindering the development of higher integration density.
Innovation Solution
A semiconductor structure with a vertical gate all around (VGAA) transistor and a capacitor structure integrated as a one-piece unit, featuring a dielectric layer between the gate and semiconductor pillar, enhancing electrical performance and integration density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a Vertical Gate All Around (VGAA) transistor structure is used to achieve higher density efficiency, then integration density is improved, but electrical performance of the access transistor and capacitor deteriorates
Solution Approach 1:
The patent transitions from planar transistor structures to vertical VGAA transistor structures, moving the gate configuration into the third dimension. The gate completely surrounds the semiconductor pillar vertically, enabling higher integration density while maintaining electrical performance through improved gate control in the vertical dimension
Solution Approach 2:
The patent implements a nested structure where the gate completely surrounds the semiconductor pillar, with the dielectric layer nested between them. The capacitor structure is also integrated within the same vertical space, allowing multiple functional elements to occupy overlapping three-dimensional spaces, thereby achieving high density without compromising electrical performance
2Quantity of substance
If the gate structure completely surrounds the semiconductor pillar to achieve VGAA configuration, then integration density is improved, but manufacturing complexity increases
Solution Approach 1:
The patent forms the dielectric layer on the sidewall of the semiconductor pillar before forming the gate structure. This preliminary action simplifies subsequent manufacturing steps by providing a pre-prepared interface for the gate, reducing the overall manufacturing complexity despite the complex final structure
Solution Approach 2:
The patent divides the structure into distinct segments: semiconductor pillar, dielectric layer, gate structure, and capacitor structure. Each segment can be manufactured and optimized independently, then assembled into the complete VGAA transistor, reducing manufacturing complexity through modular fabrication
Data Source
AI summary
A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes a substrate, a gate structure and a dielectric layer. Herein, the substrate includes discrete semiconductor pillars. The semiconductor pillars are arranged at the top of the substrate and extend in a vertical direction. The substrate further includes a capacitor structure located at the top of the semiconductor pillar. The gate structure is arranged at the middle area of the semiconductor pillar and surrounds the semiconductor pillar. The dielectric layer is located between the gate structure and the semiconductor pillar, and covers the sidewall of the semiconductor pillar.