Vertical High-Voltage LED Structure Reducing Thermal Resistance

The patent inverts the traditional lateral LED structure by adopting a vertical configuration where the current flows perpendicular to the substrate surface. This inversion allows the current to pass through the active region more effectively, eliminating current blockage issues while maintaining low power conversion loss. The vertical structure enables both high luminous efficiency and low power loss simultaneously.

The patent transitions from a two-dimensional lateral structure to a three-dimensional vertical structure. By stacking the LED layers vertically and allowing current flow in the vertical dimension, the design overcomes the current blockage limitation of lateral structures. This dimensional change enables superior heat dissipation pathways and improved current distribution, resolving the contradiction between power efficiency and luminous efficiency.

The vertical structure inverts the heat dissipation pathway from lateral to vertical direction. Heat generated in the active region can now flow directly downward through the n-type layer to the heat sink substrate, creating a more efficient thermal management system. This vertical heat flow path reduces thermal resistance while maintaining the power conversion efficiency benefits.

The patent extracts the heat dissipation function from the lateral plane and concentrates it in the vertical direction. By designing the vertical structure with dedicated heat sinking pathways and separating the light-emitting function from the heat-dissipating function, the system achieves low thermal resistance without compromising power conversion efficiency.

The patent segments the LED structure into distinct vertical layers (n-type layer, active region, p-type layer) that can be grown separately using epitaxial techniques. This segmentation allows each layer to be optimized independently while maintaining overall manufacturing efficiency. The modular vertical structure simplifies the fabrication process compared to attempting to create complex lateral configurations.

The patent utilizes parameter changes in the epitaxial growth process to create the vertical structure. By controlling growth conditions, layer thickness, and doping parameters during semiconductor fabrication, the vertical LED structure can be manufactured efficiently. These parameter adjustments enable precise control over the vertical layer structure without significantly increasing manufacturing complexity.