Vertical Interconnect Elevator for 3D FPGA-HBM TSV Packaging
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The current Field Programmable Gate Array (FPGA) IC chips have limitations such as larger size, higher fabrication costs, and increased Non-Recurring Engineering (NRE) costs when transitioning to advanced semiconductor technology nodes, hindering innovation and adoption of advanced technology nodes in semiconductor ICs.
Innovation Solution
A 3D Chip-Scale-Package (CSP) is developed by stacking FPGA and High Bandwidth Memory (HBM) IC chips using flip-chip bonding, with Through-Silicon-Vias (TSVs) for interconnects, and a Vertical Interconnect Elevator (VIE) chip, allowing for efficient power, signal, and clock distribution, and reducing NRE costs through the use of a standard commodity FPGA/HBM CSP with a non-volatile memory IC chip and auxiliary IC chips.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If FPGA IC chips are used for advanced applications, then design flexibility and reconfigurability are improved, but chip size increases and fabrication cost rises
Solution Approach 1:
The system is divided into multiple functional components: FPGA IC chip for logic functions, HBM IC chip for memory, and auxiliary IC chips for specialized functions. Each component is optimized independently and integrated through TSV interconnects, allowing the FPGA to maintain flexibility while offloading storage and specialized tasks to dedicated components.
Solution Approach 2:
The patent transitions from traditional 2D planar packaging to 3D vertical stacking architecture. Multiple IC chips are stacked in the vertical dimension and interconnected through Through-Silicon Vias, enabling high-density integration and reduced footprint while maintaining design flexibility through the programmable FPGA component.
2Productivity
If transitioning to advanced semiconductor technology nodes is implemented, then performance and integration density are improved, but NRE costs increase significantly
Solution Approach 1:
The FPGA IC chip serves multiple functions: general-purpose logic implementation, configuration storage, and interconnect routing. Auxiliary IC chips provide specialized functions that can be shared across multiple applications. This multi-functionality reduces the need for custom ASIC designs, lowering NRE costs while maintaining high integration density through standard manufacturing processes.
Solution Approach 2:
The patent introduces auxiliary IC chips as intermediary components between the FPGA and HBM, providing specialized functions such as memory control, I/O interfacing, and signal conditioning. These standardized intermediary components enable the system to leverage advanced technology nodes for performance-critical paths while using mature, cost-effective processes for less demanding functions.
3Speed
If HBM IC chip is stacked on FPGA IC chip using flip-chip bonding, then bandwidth and memory access speed are improved, but manufacturing complexity increases
Solution Approach 1:
The HBM IC chip is nested vertically on top of the FPGA IC chip, with multiple memory stacks integrated within a compact footprint. This nested 3D architecture enables high bandwidth and fast memory access by placing memory directly over compute logic, while the modular nested structure facilitates standardized manufacturing processes.
Solution Approach 2:
The patent introduces dedicated TSV interconnect structures and auxiliary IC chips as intermediaries between the HBM and FPGA. These intermediary elements manage the complex signaling and data flow between stacked components, enabling high-speed memory access while abstracting the manufacturing complexity through standardized interconnect interfaces and modular assembly procedures.
Data Source
AI summary
A chip package includes a first integrated-circuit (IC) chip; a second integrated-circuit (IC) chip over the first integrated-circuit (IC) chip; a connector over the first integrated-circuit (IC) chip and on a same horizontal level as the second integrated-circuit (IC) chip, wherein the connector comprises a substrate over the first integrated-circuit (IC) chip and a plurality of through vias vertically extending through the substrate of the connector; a polymer layer over the first integrated-circuit (IC) chip, wherein the polymer layer has a portion between the second integrated-circuit (IC) chip and connector, wherein the polymer layer has a top surface coplanar with a top surface of the second integrated-circuit (IC) chip, a top surface of the substrate of the connector and a top surface of each of the plurality of through vias; and an interconnection scheme on the top surface of the polymer layer, the top surface of the second integrated-circuit (IC) chip, the top surface of the connector and the top surface of each of the plurality of through vias.


