Vertical Memory Device Insulation Layer Support
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Solution Overview
Problem
In the manufacturing of vertical memory devices, insulation layers tend to deform or lean during the etching process, leading to misalignment and positional issues with the channels, which affects the accuracy and reliability of the device.
Innovation Solution
The introduction of supporters made of silicon oxide or polysilicon, which are strategically placed to prevent the insulation layers from leaning during the formation of openings and gaps, ensuring accurate positioning of gate electrodes and channels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If insulation layers are formed without supporters, then the manufacturing process is simpler, but the insulation layers deform or lean during etching, causing misalignment
Solution Approach 1:
Supporters are introduced as intermediary structures that physically support the insulation layers during the etching process. These supporters prevent the insulation layers from deforming or leaning, thereby maintaining alignment accuracy without requiring complex process controls
Solution Approach 2:
The supporters are formed in advance before the etching process begins. By pre-positioning these support structures, the insulation layers are maintained in their correct positions throughout subsequent manufacturing steps, preventing misalignment before it can occur
2Reliability
If supporters are added to prevent insulation layer deformation, then manufacturing precision improves, but the device structure becomes more complex
Solution Approach 1:
The supporters act as temporary intermediary structures that provide mechanical support during critical manufacturing steps. They ensure the reliability and integrity of the insulation layers and channels by preventing deformation, while being simple in structure themselves
Solution Approach 2:
The supporters are designed to be temporary structures that are removed after serving their protective function. This allows them to provide reliability during manufacturing without permanently increasing the complexity of the final device structure
Data Source
AI summary
A vertical memory device including a substrate including first regions and a second region; a plurality of channels in the first regions, the plurality of channels extending in a first direction substantially perpendicular to a top surface of the substrate; a charge storage structure on a sidewall of each channel in a second direction substantially parallel to the top surface of the substrate; a plurality of gate electrodes in the first regions, the plurality of gate electrodes arranged on a sidewall of the charge storage structure and spaced apart from each other in the first direction; and a plurality of supporters in the second region, the plurality of supporters spaced apart from each other in a third direction substantially perpendicular to the first direction and the second direction, the plurality of supporters contacting a sidewall of at least one gate electrode.