Vertical Memory Device Insulator Layer Hydrogen Blocking
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Solution Overview
Problem
The yield of semiconductor memory devices is hindered by hydrogen generated during the formation of stacked wiring, which can degrade transistor performance and reduce manufacturing efficiency.
Innovation Solution
Incorporating a blocking portion with an insulating film that separates the memory region from the peripheral circuit region, effectively blocking hydrogen penetration paths and preventing performance degradation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If stacked wiring is formed in the peripheral circuit region, then device functionality is improved, but hydrogen is generated that penetrates into the memory region and degrades transistor performance
Solution Approach 1:
The device is divided into a memory region and a peripheral circuit region separated by a blocking portion. This segmentation prevents hydrogen generated in the peripheral circuit region from penetrating into the memory region, while maintaining the functionality of both regions.
Solution Approach 2:
A blocking portion consisting of an insulating film is introduced as an intermediary structure between the memory region and the peripheral circuit region. This blocking portion acts as a barrier that stops hydrogen diffusion paths without interfering with the normal operation of either region.
2Device complexity
If stacked wiring formation is performed, then device complexity is reduced, but manufacturing yield decreases due to hydrogen-induced performance degradation
Solution Approach 1:
By segmenting the device into distinct memory and peripheral circuit regions with a blocking portion in between, the patent enables simplified stacked wiring formation in the peripheral circuit region without compromising manufacturing yield. The blocking portion isolates hydrogen generation to the peripheral region only.
3Device complexity
If no blocking portion is provided, then device structure is simpler, but hydrogen penetration paths allow performance degradation
Solution Approach 1:
A blocking portion consisting of an insulating film is introduced as an intermediary structure between the memory region and the peripheral circuit region. This blocking portion acts as a barrier that stops hydrogen diffusion paths without interfering with the normal operation of either region.
Solution Approach 2:
The harmful hydrogen generation process is effectively extracted or isolated to the peripheral circuit region by the blocking portion. This allows the memory region to be protected from hydrogen contamination while the peripheral circuit region maintains its functionality with stacked wiring.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances the yield of semiconductor memory devices by preventing hydrogen-induced performance degradation, ensuring more reliable transistor operation and improved manufacturing outcomes.
Implementation Method 1
a blocking portion provided in a boundary region between the memory region and the peripheral circuit region, wherein the blocking portion includes an insulating film
Data Source
AI summary
A semiconductor memory device includes a substrate, a first conductor layer, and a first insulator layer. The substrate includes a first region on which memory cells are provided, a second region on which a control circuit of the memory cells is provided, and a third region separating the first region and the second region. The first conductor layer is above the second region of the substrate. The first insulator layer is above the second and third regions of the substrate. The first insulator layer includes a first portion that is above the first conductor layer and extends along a surface direction of the substrate, and a second portion that is continuous with the first portion and extends along a thickness direction of the substrate from the first portion toward a surface of the substrate in the third region.