Vertical Memory Device Stepped Gate Structure RC Delay
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Solution Overview
Problem
The increasing demand for high-capacity data processing in smaller electronic products necessitates a higher degree of integration in semiconductor memory devices, which is not effectively addressed by conventional planar transistor structures, leading to challenges in reducing RC delay differences between upper and lower end word lines in vertical-type memory devices.
Innovation Solution
A vertical-type memory device is designed with a substrate having a cell array region and a connection region, featuring stacked gate electrode layers forming a stepped structure, channel structures penetrating these layers, and slits between them, which reduces RC delay differences by optimizing the structure and layout of the memory device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If vertical-type memory device with stacked gate electrode layers is implemented, then integration capacity is improved, but RC delay difference between upper and lower end word lines increases
Solution Approach 1:
The gate electrode layers are segmented into multiple stacks (first gate electrode layer stack, second gate electrode layer stack, third gate electrode layer stack) positioned at different locations. This segmentation allows different word lines to be distributed across multiple physical stacks, reducing the RC delay difference between upper and lower end word lines while maintaining high integration capacity through the stacked configuration.
2Quantity of substance
If gate electrode layers are stacked to increase integration, then device density is improved, but manufacturing complexity increases
Solution Approach 1:
The gate electrode layers are divided into multiple separate stacks rather than forming a single continuous structure. This segmentation simplifies the manufacturing process by allowing each stack to be formed and positioned independently, reducing the overall manufacturing complexity while achieving high device density through the stacked arrangement.
Solution Approach 2:
The gate electrode layers are arranged in a vertical stacked configuration rather than a conventional planar arrangement. This dimensional change from 2D to 3D stacking increases device density without proportionally increasing manufacturing complexity, as the stacking can be achieved through sequential deposition processes.
Data Source
AI summary
A vertical-type memory device includes a substrate having a cell array region and a connection region disposed adjacent to the cell array region, a plurality of gate electrode layers stacked on the cell array region and the connection region, a plurality of channel structures disposed in the cell array region, a plurality of dummy channel structures disposed in the connection region, and a plurality of slits disposed in the plurality of gate electrode layers in the cell array region. The plurality of gate electrode layers forms a stepped structure in the connection region, the plurality of channel structures penetrates the plurality of gate electrode layers, and the plurality of dummy channel structures penetrates at least one of the plurality of gate electrode layers.