Vertical Organic Light-Emitting Transistors With Source Insulation Film
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Solution Overview
Problem
Vertical-type organic light-emitting transistors face challenges in controlling electric charges due to high off-state leakage current and reduced on-off ratio, primarily because the source electrode blocks the electric field produced by the gate voltage, making it difficult to manage electric charges injected from the top of the source electrode.
Innovation Solution
The implementation of a source insulation film that fully covers the top and sides of the source electrode, allowing electric charges to be injected only from the bottom into the lower semiconductor layer, thereby controlling the electric charges effectively with the gate voltage, reducing off-state leakage current and improving the current and on-off ratio.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a source insulation film is formed on the top of the source electrode to prevent charge injection, then off-state leakage current is reduced, but electric charges injected from the sides of the source electrode cannot be controlled by gate voltage due to large electric field magnitude
Solution Approach 1:
The patent transitions from a conventional planar transistor structure to a vertical-type structure where the channel extends in the vertical dimension. The source electrode is positioned at the bottom with the channel forming upward toward the drain, allowing the gate electrode to effectively control electric charges injected from the source through the vertical channel region, while the source insulation film prevents unwanted injection from the top surface
2Ease of operation
If the source electrode structure is modified to improve charge control, then gate voltage control efficiency increases, but device complexity increases
Solution Approach 1:
The source electrode structure is segmented into distinct functional regions: a bottom source electrode that injects charges into the channel, and a top source insulation film that prevents unwanted charge injection. This segmentation allows independent optimization of charge injection control and gate voltage effectiveness without requiring complete structural redesign
Solution Approach 2:
The source insulation film acts as an intermediary element between the source electrode and the channel region. It mediates charge injection by allowing controlled injection from the bottom while blocking injection from the top, enabling effective gate voltage control without complex electrode modifications
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly reduces off-state leakage current and enhances the current and on-off ratio of vertical-type organic light-emitting transistors, making them suitable for next-generation displays and photoelectric devices.
Implementation Method 1
Because a source electrode blocks an electric field produced by a gate voltage, controlling electric charges injected from the top of the source electrode through the gate voltage is not easy
Implementation Method 2
controlling electric charges injected from the top of the source electrode through the gate voltage
Data Source
AI summary
A vertical-type organic light-emitting transistor for reducing the off-state leakage current to improve the current and on-off ratio includes a gate electrode, a lower semiconductor layer disposed on the gate electrode, a source electrode disposed on the lower semiconductor layer, and a source insulation film disposed on the source electrode and covering top and sides of the source electrode, wherein the lower semiconductor layer is configured such that an electric charge is injected into the lower semiconductor layer from the source electrode when voltage is applied to the gate electrode.