Quasi-Surface Emission Vertical Organic Light-Emitting Transistors
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing organic light-emitting transistors have limited light emission area and efficiency due to line-type emission characteristics and poor connectivity from random carbon nano-tube distribution, which affects stability and reproducibility.
Innovation Solution
A quasi-surface emission vertical-type organic light-emitting transistor with a mesh-type source electrode having apertures in an array pattern, reducing the need for additional driving elements and enhancing light emission efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a mesh-type source electrode with apertures in array pattern is used, then light emission efficiency and aperture ratio are improved, but device complexity increases
Solution Approach 1:
The source electrode is segmented into a mesh-type structure with multiple apertures arranged in an array pattern, allowing light to emit through multiple discrete regions simultaneously, thereby increasing overall light emission efficiency and aperture ratio
Solution Approach 2:
The mesh-type source electrode is integrated within the vertical-type transistor structure, with the electrode pattern nested within the overall device architecture, achieving enhanced light emission without proportionally increasing device footprint
2Area of stationary object
If carbon nano-tubes are used as source electrode, then light emission area is increased, but stability and lifetime are reduced due to random distribution and surface roughness
Solution Approach 1:
The source electrode uses a homogeneous mesh-type pattern with uniformly distributed apertures, eliminating the random distribution and surface roughness problems associated with carbon nano-tube assemblies, thereby improving device stability and reproducibility
Solution Approach 2:
The source electrode structure is changed from random carbon nano-tube distribution to a controlled mesh pattern with specific aperture dimensions (200 μm or below) and spacing, transforming the physical parameters to achieve both large emission area and high stability
3Device complexity
If source and drain electrodes are laterally located on the same plane, then device structure is simplified, but light emission area is limited to small region
Solution Approach 1:
The device transitions from a planar lateral electrode arrangement to a vertical-type structure where the mesh source electrode is positioned above the semiconductor layer, enabling light emission from the top surface and dramatically increasing the effective light emission area
Data Source
Figure 1a~1b
Figure 2a~2b
Figure 3a~3d
AI summary
An organic light-emitting transistor may include a mesh-type source electrode (40) having a plurality of apertures (400) in an array pattern. The mesh-type source electrode (40) may be located between the gate electrode (20) and the drain electrode (80). The organic light-emitting transistor adopting a mesh-type source electrode (40) may show quasi-surface emission characteristics similar to that of the organic light-emitting diode. Moreover, an aperture ratio, brightness, and light emission efficiency of the organic light-emitting transistor may be superior to those of an organic light-emitting diode. Another advantage is that the production cost may be reduced since an additional driving element such as a thin-film-transistor is not needed.