Vertical SCR With Lateral Triggering for Low-Capacitance ESD
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Solution Overview
Problem
SCRs used for ESD protection in ICs face challenges with high capacitance loading and poor harmonics, impacting RF performance in high-performance analog and RF designs.
Innovation Solution
A device triggered silicon control rectifier (SCR) with a vertical structure and lateral triggering device, comprising specific diffusion regions and a body contact, is designed to enhance ESD protection with lowered trigger voltage and faster switching times.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional SCR structure is used for ESD protection, then high current handling ability is achieved, but capacitance loading increases and RF performance deteriorates
Solution Approach 1:
The SCR is divided into separate vertical and lateral components. The vertical SCR handles high current for ESD protection, while the lateral triggering device with reduced capacitance structure enables controlled activation. This segmentation allows the ESD protection function to maintain high current handling while the lateral structure minimizes capacitance loading that degrades RF performance.
Solution Approach 2:
The patent transitions from a conventional planar SCR structure to a vertical SCR with lateral triggering. By adding the vertical dimension and using lateral diffusion regions for triggering, the design achieves lower capacitance between trigger and control terminals while maintaining effective ESD protection, thereby improving RF performance.
2Reliability
If a conventional SCR structure is used, then ESD protection is provided, but switching time is slow
Solution Approach 1:
The lateral triggering device is designed with optimized diffusion regions and doping profiles that prepare the SCR for rapid activation. The shared third diffusion region and body contact configuration pre-position charge carriers and electric fields to enable faster switching response when ESD events occur, reducing the duration of the protective action.
Data Source
AI summary
The present disclosure relates to semiconductor structures and, more particularly, to a device triggered silicon control rectifier (SCR) and methods of manufacture. The structure includes: a vertical silicon controlled rectifier; a lateral triggering device including a first diffusion region, a second diffusion region and a third diffusion region, the third diffusion region being shared with the vertical silicon controlled rectifier; and a body contact over the first diffusion region.