Infrared Detector With Vertical Sidewall Layer for Resistance Uniformity
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Solution Overview
Problem
Conventional uncooled infrared detectors with planar sensitive layers face issues of resistance uniformity worsened by lithography and film thickness, leading to increased circuit complexity and cost, and high resistivity requiring reduced bias voltage, which complicates design and reduces overall performance.
Innovation Solution
Incorporating a vertical sidewall sensitive layer on fin structures, such as M-shaped or U-shaped fins, with electrodes positioned to avoid short circuits and allowing for flexible resistance adjustment using the formula R=ρ*L/(W*t), where W is width, L is length, and t is thickness, minimizing the impact of lithography and film thickness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a planar sensitive layer is used in conventional uncooled infrared detectors, then the device structure is simple, but the resistance uniformity deteriorates due to lithography and film thickness variations
Solution Approach 1:
The patent transitions from a planar (2D) sensitive layer to a vertical sidewall structure (3D), where the sensitive layer is deposited on the vertical sidewalls of fin structures. This dimensional change allows the resistance to be primarily determined by the fin height and material properties rather than lithography-defined dimensions, thereby improving resistance uniformity while maintaining structural complexity at an acceptable level.
2Manufacturing precision
If compensation resistance is added in ASIC circuit design to compensate for resistance non-uniformity, then the resistance uniformity can be improved, but the circuit complexity and cost increase
Solution Approach 1:
The patent extracts the resistance control function from the circuit level and relocates it to the physical structure level. By designing the fin structures with controlled heights and widths, the resistance uniformity is achieved through structural optimization rather than requiring complex compensation circuits, thereby eliminating the need for additional compensation resistance in the ASIC design.
3Use of energy by stationary object
If the sensitive resistor design value is reduced to lower bias voltage, then the bias voltage is reduced, but the resistivity of sensitive material becomes too high
Solution Approach 1:
The patent changes the geometric parameters of the sensitive layer by utilizing vertical sidewalls with controlled heights and widths. This allows independent optimization of the resistance value through fin height adjustment, enabling the use of higher resistivity materials while maintaining appropriate bias voltages, as the resistance is controlled by the fin dimensions rather than material resistivity alone.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The vertical sidewall design enhances sensitivity and precision by reducing errors in resistance values, improving uniformity, and allowing for adjustable resistance without increasing circuit complexity or cost.
Implementation Method 1
Infrared detector having vertical sidewall sensitive layer and manufacturing method thereof
Data Source
AI summary
The present disclosure provided an infrared detector having a vertical sidewall sensitive layer and a manufacturing method thereof. By forming at least one fin structure on a semiconductor substrate; and a sensitive layer can be formed on the sidewall of the fin structure by ion implantation. The vertical sidewall sensitive layer is configured to reduce the impact of lithography on the sensitive layer, thereby reducing the impact on the sensitivity of the sensitive layer (03).