Vertical Stack Micro LED Structure for Transfer-Free High-Resolution Displays
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Solution Overview
Problem
Current technologies face challenges in manufacturing high-resolution display apparatuses using micro LEDs, particularly in arranging micro LED chips efficiently and achieving high-resolution displays without requiring advanced transfer technologies and color conversion layers.
Innovation Solution
A light emitting structure with a vertical stack epitaxial structure is developed, comprising sequentially stacked epitaxial structures with carrier and electron blocking layers, and junction layers, allowing for the formation of monolithic micro light emitting devices that emit different wavelengths, which are then arranged in a two-dimensional array on a growth substrate without the need for high-level transfer technologies or color conversion layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If micro LED chips are used to manufacture high-resolution display apparatuses, then display resolution is improved, but manufacturing complexity and transfer technology requirements increase
Solution Approach 1:
The patent transitions from a planar arrangement of micro LED chips to a three-dimensional vertical stack epitaxial structure. Multiple light emitting layers are stacked vertically on a single growth substrate, enabling high-resolution displays without requiring complex transfer technologies to arrange numerous individual micro chips in two dimensions.
Solution Approach 2:
The patent combines multiple light emitting devices and color emission capabilities into a single integrated vertical stack structure. Multiple epitaxial structures with different light emitting wavelengths are merged into one monolithic device, eliminating the need for separate micro LED chips and complex transfer processes.
2Manufacturing precision
If micro LED chips are arranged in a two-dimensional array, then display resolution is improved, but manufacturing time and cost increase
Solution Approach 1:
The patent moves from two-dimensional chip arrangement to three-dimensional vertical stacking, allowing multiple light emitting layers to be manufactured simultaneously on a single growth substrate rather than requiring sequential placement of individual chips, thereby significantly reducing manufacturing time.
Solution Approach 2:
The patent performs preliminary growth of multiple epitaxial structures with different light emitting wavelengths directly on the growth substrate before any separation or transfer processes. This preliminary formation of the complete vertical stack structure streamlines manufacturing and reduces subsequent processing steps.
3Manufacturing precision
If color conversion layers are used to achieve high-resolution displays, then display quality is improved, but device complexity and manufacturing steps increase
Solution Approach 1:
The patent extracts and eliminates the need for separate color conversion layers by directly incorporating multiple light emitting layers with different wavelengths into the vertical stack epitaxial structure. Each epitaxial layer inherently emits its characteristic wavelength, removing the requirement for additional color conversion components.
Solution Approach 2:
The vertical stack epitaxial structure serves multiple functions simultaneously: it generates multiple colors, provides structural support, and enables high-resolution display without requiring separate color conversion layers. Each epitaxial structure acts as both a light source and a structural element.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of high-resolution displays with reduced manufacturing costs and time, achieving resolutions of 5000 ppi or higher without the need for advanced transfer technologies or color conversion layers, and can be applied to various display applications, including augmented reality.
Implementation Method 1
Each of the first epitaxial structure, the second epitaxial structure, and the third epitaxial structure may be configured to emit light at different wavelengths
Data Source
AI summary
A light emitting structure includes: a substrate; a first epitaxial structure disposed on the substrate; a second epitaxial structure disposed on the first epitaxial structure; and a third epitaxial structure disposed on the second epitaxial structure. Each of the first epitaxial structure, the second epitaxial structure, and the third epitaxial structure comprises, in a sequentially stacked structure, a first semiconductor layer of a first conductivity, a carrier blocking layer, an active layer, and a second semiconductor layer of a second conductivity.