Vertical Support Structure for Stable Semiconductor Capacitors

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

The intermediate structure of capacitor structures in semiconductor devices is prone to collapsing during the removal of sacrificial layers, leading to a lower manufacturing yield.

Innovation Solution

Incorporating a vertical supporting structure that connects horizontal supporting layers to reinforce the overall structure, preventing collapse and enhancing manufacturing yield.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If sacrificial layers are removed to define spaces for capacitor electrodes, then capacitor structure formation is enabled, but the intermediate structure becomes prone to collapsing

Engineering Contradiction:

Improvecapacitor structure formationVSAvoidintermediate structure stability

Core Design Contradiction:

Manufacturing precisionVSStability of the object's composition

Solution Approach 1:

The supporting structure is divided into multiple horizontal supporting layers (first, second, third horizontal supporting layers) positioned at different heights, which work together to provide distributed support to the intermediate structure during sacrificial layer removal, preventing collapse while enabling precise capacitor formation

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent introduces vertical dimension support by adding horizontal supporting layers at different heights (first, second, third layers) connected by vertical supporting structures, creating a three-dimensional support framework that stabilizes the intermediate structure during the critical removal phase

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Strength

If horizontal supporting layers are used to support capacitor structures, then structural support is provided, but the framework remains prone to collapsing without vertical reinforcement

Engineering Contradiction:

Improvesupporting layer strengthVSAvoidmanufacturing yield

Core Design Contradiction:

StrengthVSReliability

Solution Approach 1:

The patent creates a composite supporting framework combining horizontal supporting layers (first, second, third layers) with vertical supporting structures, forming a multi-material, multi-orientation composite structure that provides both horizontal and vertical reinforcement to prevent collapse and improve manufacturing reliability

Inventive Principle:

Principle #40Composite materials

Solution Approach 2:

The horizontal and vertical supporting structures are formed before the sacrificial layers are completely removed, providing preliminary reinforcement to the intermediate structure at the critical moment when it is most vulnerable to collapse, thereby ensuring manufacturing yield

Inventive Principle:

Principle #10Preliminary action

3Stability of the object's composition

If vertical supporting structures are added to connect horizontal supporting layers, then structural rigidity is improved, but device complexity increases

Engineering Contradiction:

Improveoverall structure rigidityVSAvoidsupporting structure complexity

Core Design Contradiction:

Stability of the object's compositionVSDevice complexity

Solution Approach 1:

The vertical supporting structures serve multiple functions: they connect the horizontal supporting layers to form a rigid framework, provide mechanical support during sacrificial layer removal, and maintain the spatial relationship between layers. This multi-functionality justifies the added structural elements without proportionally increasing complexity

Inventive Principle:

Principle #6Universality (Multi-functionality)

Data Source

PatentUS20250311393A1Semiconductor device including vertical supporting structure

Publication Date: 2025.10.02 NAN YA TECH

AI summary

A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a substrate, a lower horizontal supporting layer, an upper horizontal supporting layer, a vertical supporting structure, and a first capacitor electrode. The lower horizontal supporting layer is disposed on the substrate. The upper horizontal supporting layer is disposed on the lower horizontal supporting layer. The vertical supporting structure extends between the lower horizontal supporting layer and the upper horizontal supporting layer. The first capacitor electrode is disposed on the substrate and extends from the lower horizontal supporting layer to the upper horizontal supporting layer.