Vertical Solid-State Transducers With Buried Contacts for Simpler Packaging
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Solution Overview
Problem
Conventional vertical high voltage solid-state LED devices face challenges with heat management, delamination, and increased complexity due to wire bonds, which affect performance and reliability, and require access to both sides of the die for electrical connections, complicating packaging and increasing manufacturing costs.
Innovation Solution
The process involves forming buried contacts on one side of the SST die, allowing for electrical connections and light emission without the need for wire bonds, using trenches and dielectric materials to isolate junctions, and incorporating a metal substrate for thermal management and direct attachment to external components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wire bonds are used for electrical connections in vertical high voltage LED devices, then electrical connectivity is achieved, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent extracts and eliminates the wire bond component from the device structure by implementing direct bonded contacts that extend through the substrate, thereby achieving electrical connectivity without the added complexity of wire bonds
Solution Approach 2:
The substrate serves multiple functions: it provides mechanical support, thermal management, and direct electrical pathways through the bonded contacts, eliminating the need for separate wire bond interconnects
2Reliability
If wire bonds are used for electrical connections, then electrical connectivity is achieved, but manufacturing cost increases
Solution Approach 1:
The patent removes the wire bond component and its associated manufacturing processes, replacing them with direct bonded contacts that are integrated into the substrate during fabrication, thereby reducing manufacturing cost
Solution Approach 2:
The electrical connection function is merged into the substrate structure itself through the bonded contacts, eliminating the need for separate wire bonding manufacturing steps
3Illumination intensity
If conventional vertical configuration is used, then light emission is achieved, but heat management becomes difficult
Solution Approach 1:
The patent transitions from lateral/current-spreading heat dissipation to vertical heat dissipation through the substrate, utilizing the thickness dimension for improved thermal management while maintaining light emission functionality
4Reliability
If access to both sides of the die is required, then electrical connections are achieved, but packaging complexity increases
Solution Approach 1:
The patent segments the electrical connection pathways into discrete bonded contacts that are embedded within the substrate, allowing connections to be made from a single side while maintaining electrical functionality
Solution Approach 2:
The substrate acts as an intermediary that provides internal pathways through the bonded contacts, enabling electrical connections to traverse the substrate thickness without requiring access to both sides
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability and performance of solid-state transducers by reducing thermal issues, simplifying packaging, and lowering manufacturing costs through direct attachment and improved heat dissipation, while maintaining high efficiency and light output.
Implementation Method 1
incorporating a metal substrate for thermal management and direct attachment to external components
Data Source
AI summary
Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.