Vertical Transistor Pad Layout for Self-Aligned Semiconductor Contacts
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Solution Overview
Problem
The scaling down of semiconductor structures for applications like DRAM devices poses challenges due to complex manufacturing processes and high costs, particularly with smaller signal lines that require precise alignment and formation of electrical pads without damage.
Innovation Solution
A semiconductor structure and manufacturing method involving a substrate with a vertical transistor and electrical pad, where the electrical pad is formed within a recess of the vertical transistor, allowing a conductive structure to be directly formed on the pad without damaging its corners, thus simplifying the process and reducing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If conventional scaling-down process is used for semiconductor structures, then device dimensions are reduced, but manufacturing complexity and cost increase significantly
Solution Approach 1:
The patent transitions from conventional planar transistor layouts to a vertical transistor architecture where the channel extends in the vertical dimension rather than laterally. This dimensional change allows continued scaling of device footprint while avoiding the manufacturing complexity that would result from further lateral scaling, as the vertical structure can be formed using standard deposition and etching processes.
Solution Approach 2:
The patent divides the transistor structure into distinct vertical segments including source region, channel region, and drain region along the vertical axis. This segmentation allows each region to be independently doped and controlled, simplifying the manufacturing process compared to attempting to scale down the entire structure uniformly in the lateral direction.
2Manufacturing precision
If conventional self-align double patterning is used, then signal line alignment is achieved, but manufacturing cost and process complexity increase
Solution Approach 1:
The patent forms the vertical transistor structure and electrical pad positioning features before depositing the conductive material for signal lines. This preliminary structuring establishes self-aligned reference features that guide subsequent material deposition, eliminating the need for complex self-align double patterning processes while maintaining precise alignment.
Solution Approach 2:
The vertical transistor structure and electrical pad configuration serve as self-aligning reference features that automatically position the conductive signal lines during deposition. The structure itself provides the alignment function without requiring additional complex patterning steps, making the manufacturing process simpler and more cost-effective.
Data Source
AI summary
A semiconductor structure and a method of manufacturing a semiconductor structure are provided. The semiconductor structure includes a substrate, an upper structure, a vertical transistor an electrical pad. The upper structure is disposed on the substrate and defines a hole. The vertical transistor is disposed in the hole. The electrical pad is disposed in the hole and on the vertical transistor. A top surface of the electrical pad is substantially aligned with a topmost surface of the upper structure.