Vertically Opposed Capacitor Arrays with Shared Electrodes
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Solution Overview
Problem
Existing memory technologies using ferroelectric capacitors face challenges in maintaining non-volatile memory states during reading, as the act of reading can reverse the polarization state, requiring immediate rewriting of the memory cell.
Innovation Solution
The formation of arrays comprising pairs of vertically opposed capacitors, where a shared capacitor electrode is used alongside programmable capacitor insulators, such as ferroelectric materials, to maintain non-volatile states without reversing polarization during reading, and the use of transistors to control and access these capacitors in memory cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Duration of action of stationary object
If ferroelectric capacitors are used for non-volatile memory storage, then data retention capability is improved, but reading operations cause polarization reversal requiring immediate rewriting
Solution Approach 1:
The capacitor structure is segmented into two separate electrodes (first capacitor electrode and second capacitor electrode) positioned on opposite sides of the ferroelectric layer. This segmentation allows independent control of each electrode, enabling read operations that sense charge without reversing the polarization state of the ferroelectric material, thus maintaining memory state stability while preserving non-volatile data retention.
2Quantity of substance
If vertically opposed capacitor pairs are formed with shared electrodes, then device density is improved, but manufacturing complexity increases
Solution Approach 1:
The first capacitor electrode of one capacitor is merged with the second capacitor electrode of an adjacent capacitor to form a shared electrode. This merging reduces the total number of electrodes required, simplifies the manufacturing process by reducing deposition and patterning steps, while still achieving high device density through the vertically opposed capacitor pairs.
Solution Approach 2:
The shared capacitor electrode serves multiple functions simultaneously: it acts as the second electrode for one capacitor and the first electrode for another capacitor. This multi-functionality reduces the overall component count and simplifies the device structure while maintaining the ability to form vertically opposed capacitor pairs for high-density memory storage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for reliable non-volatile memory storage by preventing polarization reversal during read operations, ensuring data integrity and reducing the need for immediate rewriting, thus enhancing memory cell stability and efficiency.
Implementation Method 1
One type of non-volatile capacitor is a ferroelectric capacitor which has ferroelectric material as at least part of the insulating material. Ferroelectric materials are characterized by having two stable polarized states and thereby can comprise programmable material of a capacitor and/or memory cell.
Implementation Method 2
A capacitor has two electrical conductors separated by electrically insulating material. Energy as an electric field may be electrostatically stored within such material.
Data Source
AI summary
A method of forming an array comprising pairs of vertically opposed capacitors comprises forming a conductive lining in individual capacitor openings in support material. An elevational mid-portion of individual of the conductive linings is removed to form an upper capacitor electrode lining and a lower capacitor electrode lining that are elevationally separate and spaced from one another in the individual capacitor openings. A capacitor insulator is formed laterally outward of the upper and lower capacitor electrode linings. Conductive material is formed laterally outward of the capacitor insulator to comprise a shared capacitor electrode that is shared by vertically opposed capacitors in individual of the pairs of vertically opposed capacitors. Other methods and structure independent of method of manufacture are disclosed.