Through-Substrate Via Metallization With Dendrites for Heat Dissipation
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Solution Overview
Problem
Existing semiconductor devices face a challenge in maintaining heat dissipation while reducing material costs by using less expensive materials, which can lead to decreased thermal performance and bonding strength.
Innovation Solution
A semiconductor device design featuring a substrate with a via hole and a conductive layer that includes dendrites, providing a large contact area and excellent bonding strength, allowing for efficient heat transfer and stable electric potential application, even when using cheaper materials like copper.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a less expensive material is used for the plating layer to reduce material cost, then material cost is reduced, but heat dissipation performance decreases
Solution Approach 1:
The patent applies composite materials by forming a multi-layer plating structure consisting of a first plating layer (e.g., nickel or palladium) and a second plating layer (e.g., copper or copper alloy) with dendrites. This composite structure combines the excellent bonding strength and oxidation resistance of the first layer with the high thermal and electrical conductivity of the second layer, achieving both cost reduction and heat dissipation performance.
Solution Approach 2:
The patent applies local quality by creating a dendritic structure in the second plating layer that provides locally enhanced bonding interfaces. The dendrites create a large contact area with the bonding material, improving heat transfer locally at the bonding interface while the bulk material provides overall thermal conductivity. This localized structural optimization allows cheaper materials to achieve comparable thermal performance.
2Quantity of substance
If a less expensive material is used for the plating layer to reduce material cost, then material cost is reduced, but bonding strength decreases
Solution Approach 1:
The patent uses composite materials with a first plating layer providing strong bonding to the substrate and a second plating layer providing cost-effective conductivity and dendritic bonding enhancement. This composite approach allows the use of cheaper materials while maintaining overall bonding strength through the synergistic combination of layers.
Solution Approach 2:
The patent applies dimensionality change by transitioning from a flat plating surface to a dendritic three-dimensional structure in the second plating layer. This dendritic structure increases the bonding interface area in the vertical dimension, creating mechanical interlocking with bonding materials and significantly enhancing bonding strength despite using cheaper materials.
3Strength
If a dendritic structure is formed in the second plating layer to increase contact area, then bonding strength and heat transfer are improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies parameter changes by controlling electroplating parameters (current density, temperature, additives) to naturally form dendritic structures in the second plating layer. By adjusting these process parameters, the dendritic morphology is achieved during standard electroplating operations without requiring additional manufacturing steps, thus improving bonding strength while limiting manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design ensures reduced material costs without compromising heat dissipation or bonding strength, enabling effective thermal management and reliable electrical connectivity.
Implementation Method 1
a second metal layer covering the first metal layer and including dendrites
Implementation Method 2
providing a large contact area and excellent bonding strength, allowing for efficient heat transfer
Implementation Method 3
a via hole extending through the substrate and having an inner wall surface... stable electric potential application
Data Source
AI summary
A semiconductor device includes a substrate having a first main surface and a second main surface opposite to the first main surface, and a first conductive layer including a first metal layer and a second metal layer, the first metal layer covering the second main surface, the second metal layer covering the first metal layer and including dendrites, wherein a via hole extending through the substrate and having an inner wall surface is formed in the substrate, and wherein the first metal layer, which is covered with the second metal layer, covers the inner wall surface.