Conductive Via Hole Structure Oxidation Prevention
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Solution Overview
Problem
In display devices, the high resistivity of aluminum wires and the oxidation of copper metal structures during the formation of organic insulating layers lead to poor contact and increased power consumption due to parasitic capacitance, which are not effectively addressed by current technologies.
Innovation Solution
A method is introduced to form a conductive via hole structure by creating a non-metallic film over the metal layer, patterning an organic insulating film, and removing the non-metallic film after baking to expose the metal surface, thereby preventing oxidation and ensuring good contact between metal structures and other components while minimizing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If copper metal structures are used to reduce resistivity, then electrical resistance is reduced, but the metal structures oxidize after organic insulating layer formation causing poor contact
Solution Approach 1:
A non-metallic film is formed on the copper metal structure before forming the organic insulating layer. This preliminary protective layer prevents oxidation of the copper surface during subsequent processing steps, ensuring good contact quality while maintaining the low resistance benefits of copper.
Solution Approach 2:
The non-metallic film acts as an intermediary layer between the copper metal structure and the organic insulating layer. It protects the copper from oxidation while allowing the organic insulating layer to be formed, thus resolving the contradiction between using copper for low resistance and preventing its oxidation.
2Loss of energy
If organic insulating layer is formed to reduce parasitic capacitance, then power consumption is reduced, but metal structures oxidize causing poor contact
Solution Approach 1:
The non-metallic film is formed on the metal structure before depositing the organic insulating layer. This allows the organic insulating layer to be formed for reducing parasitic capacitance and power consumption, while the non-metallic film simultaneously protects the metal structure from oxidation, maintaining contact quality.
3Ease of manufacture
If aluminum wires are used in metal layers, then fabrication is simpler, but resistivity is too high to meet display performance requirements
Solution Approach 1:
The material parameter of the metal layer is changed from aluminum to copper, which has lower resistivity (30% lower than aluminum). This parameter change enables the metal structures to meet the electrical resistance requirements for high refresh rate displays while maintaining fabrication simplicity through the added protective film process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively reduces the oxidation of copper metal structures, maintains low resistance, and minimizes power consumption by preventing poor contact issues, thus enhancing the performance of display devices without increasing fabrication costs.
Implementation Method 1
avoid the poor contact between a metal structure and other component caused by the metal structure on the array substrate that is seriously oxidized after the organic insulating layer is formed
Implementation Method 2
baking the organic insulating film that has been patterned to form an organic insulating layer
Data Source
AI summary
A preparation method of a conductive via hole structure, a preparation method of an array substrate and a preparation method of a display device, the preparation method of the array substrate includes: forming a first metal layer (01) including the first metal structure (01a), forming a non-metallic film including a first part corresponding to the first metal structure (01a) and an organic insulating film (40′) in sequence; patterning the organic insulating film (40′) to form a first organic insulating layer via hole (41) corresponding to the first part; then baking to form an organic insulating layer (40); and then, removing the first part of the non-metallic film to form a non-metallic layer and expose the part of the surface (011) of the first metal structure (01a). This method can avoid the metal structure from being seriously oxidized.