Integrated Visible and SWIR Image Sensor Pixel Architecture

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Solution Overview

Problem

Existing image sensors are limited in their ability to detect both visible light and short wave infrared (SWIR) light, often requiring separate sensors for each, which can be costly and pose eye safety risks with high power emissions.

Innovation Solution

An image sensor design that integrates photodiodes for visible light detection and thin-film diodes for SWIR detection, utilizing a Schottky diode configuration with finger-like metal structures to enhance SWIR sensitivity, allowing dual detection capabilities in a single sensor.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If separate sensors are used for visible light and SWIR detection, then detection capability is improved, but device complexity and cost increase

Engineering Contradiction:
Improvedetection capabilityVSAvoiddevice complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent combines visible light detection and SWIR detection into a single integrated sensor device. The sensor array includes both visible light sensing elements and SWIR sensing elements in the same device, allowing dual detection functionality while reducing device complexity and cost compared to using separate sensors.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The integrated sensor device performs multiple functions by detecting both visible light and SWIR radiation simultaneously. This multi-functional approach allows a single device to replace what would traditionally require separate specialized sensors, reducing overall system complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Measurement precision

If high power SWIR emission is used, then SWIR detection sensitivity is improved, but eye safety risks increase

Engineering Contradiction:
ImproveSWIR detection sensitivityVSAvoideye safety risks
Core Design Contradiction:
Measurement precisionVSObject-affected harmful factors

Solution Approach 1:

The patent changes the detection parameter from requiring high power SWIR emission to using passive SWIR detection. By utilizing naturally occurring or ambient SWIR radiation and optimizing the sensor's sensitivity to SWIR wavelengths, the system achieves adequate detection sensitivity without the eye safety hazards associated with high power emission.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The integrated sensor provides full resolution color and SWIR imaging, reducing costs and eliminating eye safety hazards while enabling multiple detection modes, including simultaneous visible and SWIR sensing.

Implementation Method 1

The image sensors may include arrays of pixels. The pixels in the image sensors may include photosensitive elements such as photodiodes that convert the incoming light into image signals.

Methodology Applied
Scientific EffectPhotoelectric Effect: Photoelectric Effect

Implementation Method 2

An image sensor design that integrates photodiodes for visible light detection and thin-film diodes for SWIR detection, utilizing a Schottky diode configuration with finger-like metal structures to enhance SWIR sensitivity

Methodology Applied
Scientific EffectPhotoelectric Effect: Photoelectric Effect

Data Source

PatentUS20250331320A1Image Sensor with Visible Light and Short Wave Infrared Detection
Publication Date: 2025.10.23 SEMICON COMPONENTS IND LLC
  • US20250331320A1 patent drawing
  • US20250331320A1 patent drawing
  • US20250331320A1 patent drawing

AI summary

An image sensor pixel is provided that includes a semiconductor substrate having a front surface and a back surface opposing the front surface, a photosensitive element such as a photodiode formed in the front surface of the semiconductor substrate and configured to sense light in a first range of wavelengths, an interconnect stack formed on the front surface of the semiconductor substrate, and a thin-film diode formed in the interconnect stack and configured to sense light in a second range of wavelengths different than the first range of wavelengths. The thin-film diode may be a Schottky diode. The thin-film diode may include one or more rows of protruding or finger-like metal structures and semiconducting oxide material disposed directly on the protruding metal structures.