Volatile Memory Cell Array for Nonvolatile Storage Erase Control
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Solution Overview
Problem
The increasing number of sectors in nonvolatile storage devices leads to a larger circuit scale for latch circuits used in erasing operations, occupying more area and inefficiently storing erase sector information.
Innovation Solution
A nonvolatile storage system utilizing a volatile memory cell array for storing erase setting information, with dedicated readout amplifiers for erasing and readout operations, allowing high-density storage and minimal area occupation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a latch circuit composed of inverter circuits is used to store erase sector information, then the circuit can perform normal logic operation and has satisfactory load driving ability, but the circuit occupies large area
Solution Approach 1:
The patent uses a simplified latch circuit that copies the essential function of storing erase sector information without requiring the full complexity of traditional inverter-based latches. The new latch circuit achieves the same storage function with reduced component count and smaller area occupation while maintaining necessary reliability.
2Quantity of substance
If the number of sectors is increased to increase storage capacity, then the storage capacity increases, but the latch circuit scale increases and occupies larger area
Solution Approach 1:
The patent changes the parameters of the latch circuit by using a simplified structure that requires fewer components. This parameter change allows the latch circuit to handle increased numbers of sectors without proportionally increasing in area, as the simplified latch uses minimal circuit elements while still providing the necessary sector information storage capability.
3Loss of information
If erase sector information is stored using traditional latch circuits, then the information can be stored, but the storage density is low and storage capacity is insufficient
Solution Approach 1:
The patent employs a simplified latch circuit structure that copies the essential information storage function while achieving higher storage density. The new latch circuit stores erase sector information with minimal circuit elements, thereby increasing the number of sectors that can be addressed without requiring proportional increases in circuit area.
Data Source
AI summary
A nonvolatile storage including a plurality of blocks each serving as one unit in erasing operation and performs a plurality of erasing operations successively, the nonvolatile storage comprising: a volatile memory cell array for storing erase setting information on each block, the information indicating whether or not its associated block is a target to be erased; a write amplifier for writing the erase setting information in the volatile memory cell array; a first readout amplifier for reading out the erase setting information on a target block from the volatile memory cell array upon start of the erasing operation; and a second readout amplifier for reading out the erase setting information on a target block from the volatile memory cell array upon start of readout operation.