Voltage Detector With Programmable Reference Voltage Generator
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Solution Overview
Problem
Conventional voltage detectors using reference voltage generator circuits have a fixed reference voltage, limiting their ability to set the threshold voltage at any desired level.
Innovation Solution
A voltage detector with a reference voltage generator comprising a first write MOS transistor, a second write MOS transistor, a first output MOS transistor, and a second output MOS transistor, where the first write MOS transistor and second write MOS transistor include tunnel oxide films for non-volatile storage, allowing for adjustable reference voltage generation through control of electric charges on floating gates, enabling the detection of input voltages relative to a programmable threshold.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a conventional reference voltage generator circuit is used, then the circuit structure is simple, but the threshold voltage cannot be adjusted to any desired level
Solution Approach 1:
The patent applies dynamics by making the reference voltage adjustable rather than fixed. The circuit transitions from a static configuration to a dynamic one where the threshold voltage can be programmed to any desired level by controlling the amount of electric charge stored in the floating gates of the MOS transistors, enabling continuous adaptation to different detection requirements
Solution Approach 2:
The patent changes the parameter of reference voltage from a fixed value to a programmable value. By varying the electric charge stored in the floating gates through write operations, the threshold voltage parameter can be adjusted to any desired level, resolving the contradiction between adjustability and circuit complexity
2Adaptability or versatility
If electric charges are controlled in floating gates through tunnel oxide film, then the reference voltage can be dynamically adjusted, but the manufacturing process becomes more complex
Solution Approach 1:
The patent applies preliminary action by pre-programming the desired threshold voltage into the floating gates during the manufacturing or initialization phase. The tunnel oxide film structure is prepared in advance to enable charge storage, and the reference voltage is set before the device enters normal operation, simplifying the overall manufacturing process despite the advanced functionality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the voltage detector to set and adjust the reference voltage dynamically, allowing for flexible operation and accurate detection of input voltages relative to a variable threshold, enhancing system performance in energy harvesting applications.
Implementation Method 1
a first write MOS transistor including a control gate and a floating gate, a second write MOS transistor connected in series with the first write MOS transistor, where the second write MOS transistor includes a control gate and a floating gate, a first output MOS transistor including a control gate and a floating gate that are electrically connected to the control gate and the floating gate of the first write MOS transistor, and a second output MOS transistor connected in series with the first output MOS transistor, where the second output MOS transistor includes a control gate and a floating gate that are electrically connected to the control gate and the floating gate of the second write MOS transistor. The first write MOS transistor and the second write MOS transistor are non-volatile storage elements each including a tunnel oxide film that allows electric charges to tunnel therethrough to be injected into the floating gate
Data Source
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AI summary
A voltage detector for detecting whether an input voltage is no lower than a predetermined threshold voltage, includes a reference voltage generator configured to generate a reference voltage, and a comparator configured to receive the input voltage and the reference voltage and to detect whether the input voltage is no lower than the threshold voltage that is determined by the reference voltage. Here, the reference voltage generator includes a first write MOS transistor, a second write MOS transistor, a first output MOS transistor and a second output MOS transistor each including a control gate and a floating gate.