Voltage Difference Generation Circuit for Semiconductor Storage
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Solution Overview
Problem
In semiconductor storage devices with a three-dimensional structure, simultaneous write operations across multiple planes lead to increased electric current demand, necessitating larger transistors in the voltage generation circuit, which in turn increases circuit area and can result in excessive voltage differences.
Innovation Solution
A voltage difference generation circuit with a bypass current path and a bypass current source is introduced, allowing a predetermined ratio of current to flow through both paths, thereby preventing excessive voltage increases while minimizing transistor size and circuit area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the transistor size is increased to handle higher current demand during simultaneous write operations, then the current supply capability is improved, but the circuit area increases
Solution Approach 1:
The voltage generation circuit is divided into multiple independent voltage generation units, each capable of supplying current to different planes. This segmentation allows the total current demand to be distributed across multiple smaller transistor units rather than requiring one large transistor, thus maintaining current supply capability while reducing the area of individual transistors and overall circuit layout efficiency.
2Power
If the transistor size is increased to supply higher current, then the current delivery is improved, but the voltage difference becomes excessive
Solution Approach 1:
A current redistribution circuit is introduced as an intermediary between the voltage generation circuit and the planes. This circuit receives the generated voltage and redistributes current to multiple planes according to their actual demand, preventing excessive voltage differences from developing while ensuring adequate current delivery to each plane without requiring oversized transistors.
3Power
If larger transistors are used to meet current demand, then the power delivery is improved, but the manufacturing complexity increases
Solution Approach 1:
The invention changes the operational parameters of the voltage generation circuit by using multiple smaller transistors operating in parallel rather than one large transistor. This parameter change allows the circuit to achieve the same power delivery capability while using transistors of manageable sizes that are easier to manufacture with standard fabrication processes, reducing manufacturing complexity and improving yield.
Data Source
AI summary
A semiconductor storage device includes a connection transistor that connects a first wiring to a word line, a block decoder that supplies a signal to a gate of the connection transistor, and a voltage generation circuit including a first node from which a first voltage for generating the signal is supplied to the block decoder, a second node from which a second voltage is supplied to the first wiring, and a voltage difference generation circuit connected between the first node and the second node, wherein the voltage difference generation circuit includes diode-connected first and second transistors and a third transistor, each of the diode-connected first and second transistors having a current path connected between the first and second nodes, the third transistor having a first terminal connected to the first node, a gate connected to a gate of the second transistor, and a second terminal connected to the second node.